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HY57V281620B Contextual Info: HY57V281620B L T 0.1 : Hynix Change HY57V281620B(L)T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16	Original	HY57V281620B 16bits 728bit 152x16 400mil	PDF
54pin TSOP Abstract: HY57V281620B HY57V281620BT8 Contextual Info: HY57V281620B L T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16	Original	HY57V281620B 16bits 728bit 152x16 400mil 54pin 54pin TSOP HY57V281620BT8	PDF

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HY57V281620B

Contextual Info: HY57V281620B L T 0.1 : Hynix Change HY57V281620B(L)T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16

Original

HY57V281620B 16bits 728bit 152x16 400mil

PDF

54pin TSOP

Abstract: HY57V281620B HY57V281620BT8
Contextual Info: HY57V281620B L T 4 Banks x 2M x 16bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16

Original

HY57V281620B 16bits 728bit 152x16 400mil 54pin 54pin TSOP HY57V281620BT8

PDF