HY57V168010CLTC Search Results

HY57V168

Abstract: hy57v168010 1sd31 66MHz
Contextual Info: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of

HY57V168010C

Abstract: HY57V168010CLTC-8 HY57V168010CLTC-10S
Contextual Info: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of

HYM7V65400

Contextual Info: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

HY57V164010

Contextual Info: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of

HY57V164010C-10

Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
Contextual Info: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of

HY57V168010C

Abstract: hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31
Contextual Info: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of

hy57v168010c

Abstract: HYM7V65400CLTFG-10P HYM7V65400
Contextual Info: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

HY57V168010C

Contextual Info: • HYM7V75A200C F-SERIES “H Y U M D U I Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM 7V75A200C is high speed 3.3Volt C M O S Synchronous D R A M module consisting of nine 2Mx8 bit Synchronous D R A M s in 44-pin T SO P II and one 8-pin T S S O P 2K bit E E P R O M on a 168-pin glass-epoxy

HY57V168

Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
Contextual Info: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG

HYM7V65200CLTFG

Abstract: hy57v168010cltc HYM7V65200C
Contextual Info: HYM7V65200C F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

hy57v168010

Abstract: TCK-270 HY57V168010CLTC-10S HY57V168
Contextual Info: HYM7V75A200C F-Series Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of nine 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

Contextual Info: - H Y U N D A I • H Y M 7 V 6 5 4 0 0 C F -S E R IE S Unbuffered 4M*64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM m odule consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

Contextual Info: -H Y U N D A I — • H Y M 7 V 6 5 2 0 0 C F -S E R IE S Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65200C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin gtass-epoxy

hy57v16801

Contextual Info: HYM7V75A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.