HY5116100B
Abstract: 10k52 1AD41-00-MAY95 1AD41
Contextual Info: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116400BT
Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Contextual Info: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC
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256kx4hy531000ajhy531000aljhy534256aj+15hy534256aljhy512260jchy512260ljchy512260sljchy512264jchy512264ljchy5116400bthy5117400cj50-pinhy5117804bttsop-ii 4426-pinhy5118160bjhy51v65804hy5117400bj
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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hy531000ashy531000alshy531000ajhy531000alj+10hy534256ashy534256alshy534256ajhy534256aljhy512260jchy512260ljcauo-pl321.60hy51v18164bhy514264hy514260
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HY51V18164
Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC
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256kx4256x8128kx16hy534256aj+11hy534256aljhy512800jhy512800ljhy512800sljhy512264jchy512264ljchy51v18164hy5118164hy514260hy51v65400hy51v17804cj
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