HY23 Search Results

16202

Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

LL-304YD2E

Abstract: LL-304YD2G
Contextual Info: LUCKY LIGHT LL-304YD2G DATA SHEET QC: Part No. ENG: LL-304YD2G Spec No. Prepared By: S/N-HY23 Page 1 of 4 LUCKY LIGHT Features ♦ ♦ ♦ ♦ High intensity Normal 3mm diameter package General purpose leads Reliable and rugged Package Dimension: Part NO.

Contextual Info: 8MX16BIT CMOS MASK ROM HY23V28151 Description The HY23V28151 high performance read only memory is organized either as 8,388,608 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of

Contextual Info: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external

4MX16

Abstract: HY23V64100 mask rom 4MX16-Bit
Contextual Info: 4MX16 BIT CMOS MASK ROM HY23V64100 Description The HY23V64100 high performance read only memory is organized as 4,194,304 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of its

500MIL

Abstract: 28550
Contextual Info: 512K X 16/1M X 8 BIT CMOS MASK ROM HY23V08200 Description The HY23V08200 high performance read only memory is organized either as 1,048,576 x 8 bit byte mode or as 524,288 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

4MX16

Abstract: mask rom
Contextual Info: 4MX16 BIT CMOS MASK ROM HY23C64100 Description The HY23C64100 high performance read only memory is organized as 4,194,304 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of its

Contextual Info: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n ­

HY2316000

Contextual Info: HY2316000 Series ••HYUNDAI 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316000 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS

Contextual Info: 512K X 16/1M X 8 BIT CMOS MASK ROM HY23C08200 Description The HY23C08200 high performance read only memory is organized either as 1,048,576 x 8 bit byte mode or as 524,288 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

32DIP

Abstract: HY23C08000D HY23C08000S
Contextual Info: 1MX8 BIT CMOS MASK ROM HY23C08000 Description The HY23C08000 high performance read only memory is organized 1,048,576 x 8 bit byte mode and has an access time of 70/100/120ns. The low power feature allows the battery operation. The large size of 8M bit memory density is ideal for character generator, data or program memory in micro-processor

Contextual Info: preliminary HY23V32200 2MX16/4MX8 BIT CMOS MASK ROM Description The HY23V32200 high per formance read onl y m em or y i s or gani z ed ei th er a s 4,19 4,304 x 8bi t byte mode or as 2,097,152 x16 bit(word mode) and has an access time of 70/100/120ns. It needs no external

mask rom 4M

Contextual Info: 512KX8 BIT CMOS MASK ROM HY23W04000 Description The HY23W04000 high performance read only memory is organized 524,288 x 8 bit byte mode and has an access time of 120/150ns. The low power feature allows the battery operation. The large size of 4M bit memory density is ideal for charactergenerator, data or program memory in micro-processor

Contextual Info: 8MX16/16MX8 BIT CMOS MASK ROM HY23V28201 Description The HY23V28201 high performance read only memory is or ganized either as 16,777,216x8bit byte mode or as 8,388,608 x16 bit(word mode) and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of its asynchronous operation. It is designed to be suitable for

Contextual Info: preliminary HY23C08200 512K X 16/1M X 8 BIT CMOS MASK ROM Description The HY23C08200 high performance read only memory is organized either as 1,048,576 x 8 bit byte mode or as 524,288 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: HY234000 Series “H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x Sbit. It ¡sfabricated using HYUNDAI'S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are TTL

E5EX

Abstract: HY2316000
Contextual Info: HYUNDAI HY2316000 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316000 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit {Byte mode or as 1,048,576 x 16bit Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS

Contextual Info: • HYUNDAI HY2316050 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316050 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS

16Mx8

Contextual Info: preliminary HY23V28200 8MX16/16MX8 BIT CMOS MASK ROM Description The HY23V28200 high performance read only memory is or ganized either as 16,777,216x8bit byte mode or as 8,388,608 x16 bit(word mode) and has an access time of 100/120ns. It needs no external

2MX16

Contextual Info: 2MX16 BIT CMOS MASK ROM HY23V32100 Description The HY23V32100 high performance read only memory is organized as 2,097,152 x16 bit word mode and has an access time of 70/100/120ns. It needs no external control clock to assure simple operation, because of its

44SOP

Contextual Info: preliminary HY23V28100 8MX16BIT CMOS MASK ROM Description The HY23V28100 high performance read only memory is organized either as 8,388,608 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of

Contextual Info: 1MX16/2MX8 BIT CMOS MASK ROM HY23C16202 Description The HY23C16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery

Contextual Info: •H Y U N D A I HY234100 Series 512KX 8-b¡t/256KX 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234100 is a 4Mbit mask-programmable ROM organized either as 524,288 x 8bit Byte mode or as 262,144 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS process

Contextual Info: preliminary HY23V08250 512K X16/1M X 8 BIT CMOS MASK ROM Description The HY23V08250 high per for mance r ead onl y m e m or y i s or gani z ed ei th er a s 1,04 8,576 x 8 b i t b y te m o de or as 524, 288 x 16 bi t( w or d m o d e ) f o l l o w e d b y B H E m o d e s e l e c t . T h e l o w p o w e r