HVD133A Search Results

HVD133A

Contextual Info: HVD133A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0171-0100Z Rev.1.00 Jan.21.2004 Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. C1 = 1.0 pF max • Low forward resistance. (rf = 0.7 Ω max)

Contextual Info: HVD133A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0171-0100Z Rev.1.00 Jan.21.2004 Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. C1 = 1.0 pF max • Low forward resistance. (rf = 0.7 Ω max)

r61505

Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
Contextual Info: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials

marking code V6 33 surface mount diode

Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
Contextual Info: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3

HVD133A

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid