HVD1 Search Results

Contextual Info: Product specification HVD142 SOD-123 Unit: mm 2.7 +0.1 0.55-0.1 +0.1 -0.1 +0.05 1.1-0.05 +0.1 1.6-0.1 Features Low capacitance. C = 0.35 pF max Low forward resistance. (rf=1.5 +0.1 3.7-0.1 max) 0.35 +0.05 0.1-0.02 0.50 0.1max A b s o lu te M a x im u m R a tin g s T a = 2 5

HITACHI RF APPLICATION

Abstract: HVD141 DSA003637
Contextual Info: HVD141 Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-1087 Z Rev.0 Jan. 2001 Features • Low capacitance. (C = 0.82 pF max) • Low forward resistance. (rf = 0.8 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

HVD144A

Abstract: PUSF0002ZB-A diode mark T7
Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0200 Rev.2.00 Sep 21, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

Hitachi DSA002725

Contextual Info: HVD132 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-830A Z Rev.1 Sep. 2000 Features • Low capacitance. (C = 0.5 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

Hitachi DSA002725

Contextual Info: HVD131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-832A Z Rev.1 Sep. 2000 Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

HVD135

Abstract: DSA003645
Contextual Info: HVD135 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-948 Z Rev. 0 Jul. 2000 Features • Adopting the trench structure improves low capacitance.(C = 0.6 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current.

HVA23

Abstract: AMF 4.0 HV25 HV-D15 HVC12 HVC20 HVD08 HVD10 HVD12 HVD20
Contextual Info: HIGH VOLTAGE RECTIFIER ASSEMBLIES, Standard Recovery is t Part N u m b er Averag e R ectified C t W e i U at T ,- 5 0 'C P t a k R everse V o ltage PR V ÍVòlta* HVD08 HVD-IO HVD12 HVD15 HVD20 8,000 10,000 20.000 2 5 .0 0 0 3 0 .0 0 0 HV5 HV7.5 HV10 HV12.5

Contextual Info: HVD138A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0426-0100 Previous: ADE-208-1589 Rev.1.00 Dec 07, 2004 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.85 pF max) Low forward resistance. (rf = 1.1 Ω max)

Contextual Info: HVD142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0428-0100 Previous: ADE-208-1590 Rev.1.00 Nov 26, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max)

HVD144A

Abstract: MARK T7
Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0429-0100 Previous: ADE-208-1591 Rev.1.00 Nov 26, 2004 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) Low forward resistance. (rf = 1.80 Ω max)

HVD145

Abstract: Hitachi DSA0047
Contextual Info: HVD145 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-1507A Z Rev.1 Jun. 2002 Features • Low capacitance.(C = 0.45 pF max) • Low forward resistance. (rf = 1.8 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

HVD142A

Abstract: PUSF0002ZB-A mark t6
Contextual Info: HVD142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0428-0200 Rev.2.00 Sep 21, 2005 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

DIODE SMD 10 25 t5

Abstract: SMD MARKING T5 smd rf transistor marking smd transistor t5 HVD145 smd 5 pin T5 marking DIODE SMD T5
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVD145 SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features An optimal solution for antenna switching in mobile phones. +0.1 3.7-0.1 Low capacitance. C = 0.45 pF max max) 0.50

marking t2

Abstract: diode smd marking T2 smd rf transistor marking HVD142
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVD142 SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low capacitance. C = 0.35 pF max Low forward resistance. (rf=1.5 +0.1 3.7-0.1 max) 0.35 +0.05 0.1-0.02 0.50 0.1max

Hitachi DSA00280

Contextual Info: HVD144A Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-1591 Z Rev.0 Sep. 2002 Features • Adopting the trench structure improves low capacitance.(C = 0.43 pF max) • Low forward resistance. (rf = 1.80 Ω max) • Low operation current.

Contextual Info: HVD131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0424-0200 Previous: ADE-208-832A Rev.2.00 Oct 29, 2004 Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

Contextual Info: HVD191 Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0015-0200 Rev.2.00 Jan 20, 2006 Features • Low capacitance. C = 0.37 pF max • Low forward resistance. (rf = 2.5 Ω max) • Super small Flat Lead Package (SFP) is suitable for surface mount design.

Contextual Info: HVD132 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0425-0200 Previous: ADE-208-830A Rev.2.00 Oct 29, 2004 Features • Low capacitance. (C = 0.5 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

HVD136

Abstract: DSA003645
Contextual Info: HVD136 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-949 Z Rev. 0 Jul. 2000 Features • Adopting the trench structure improves low capacitance.(C = 0.45 pF max) • Low forward resistance. (rf = 2.5 Ω max) • Low operation current.

HVD131

Contextual Info: HVD131 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0424-0200 Previous: ADE-208-832A Rev.2.00 Oct 29, 2004 Features • Low capacitance. (C = 0.8 pF max) • Low forward resistance. (rf = 1.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.

mark code t4 diode

Abstract: D 1413 transistor HVD144 DSA003640
Contextual Info: HVD144 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-1413 Z Rev.0 Sep. 2001 Features • Adopting the trench structure improves low capacitance.(C = 0.45 pF max) • Low forward resistance. (rf = 2.0 Ω max) • Low operation current.

Contextual Info: HVD148 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0210-0100Z Rev.1.00 Apr.05.2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.37 pF max Low forward resistance. (rf = 2.5 Ω max)