HT200 Search Results

Contextual Info: APPROVAL PART NO. HT2002L DESCRITION LCD MODULE 176 x RGB × 220 Dots REMARKS This is ROHS compliant CUSTOMER APPLICATION P/N APPROVED BY DATE PLEASE KINDLY FIND AND APPROVE THE SPECIFICATIONS INSERTED HEREIN AND RETURN ONE COPY HERE OF WITH YOUR SIGNATURE OF APPROVAL.

HT882

Abstract: HT-88
Contextual Info: HI-SINCERITY Spec. No. : HT200205 Issued Date : 1993.05.15 Revised Date : 2005.12.02 Page No. : 1/5 MICROELECTRONICS CORP. HT882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.

Contextual Info: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

TL 139

Abstract: HT117 AH117
Contextual Info: HI-SINCERITY Spec. No. : HT200207 Issued Date : 2002.04.01 Revised Date : 2004.10.01 Page No. : 1/4 MICROELECTRONICS CORP. HT117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126 The HT117 is designed for use in general purpose amplifier and low-speed switching applications.

HMJE200

Abstract: HMJE210 o25c
Contextual Info: HI-SINCERITY Spec. No. : HT200102 Issued Date : 2001.01.01 Revised Date : 2005.12.02 Page No. : 1/6 MICROELECTRONICS CORP. HMJE200 NPN Complementary Silicon Power Plastic Transistors HMJE210 PNP Complementary Silicon Power Plastic Transistors TO-126 Description

HBD437T

Abstract: HBD438T
Contextual Info: HI-SINCERITY Spec. No. : HT200206 Issued Date : 2001.04.01 Revised Date : 2002.02.08 Page No. : 1/3 MICROELECTRONICS CORP. HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching

HMJE13003T

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications.

HT112

Contextual Info: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2003.01.04 Page No. : 1/4 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and lowspeed switching applications.

Contextual Info: Honeywell HTM O S High Temperature Products Advance Information HTMOS™ GATE ARRAYS HT2000 FAMILY FEATURES APPLICATIONS • Specified -55 to +225°C, Operation to +300°C • Down-Hole Oil Well • Fabricated with HTMOS™ 0.65 j.m Process • Avionics

649T

Abstract: sb 649t HSB649T HT200103 sb649t
Contextual Info: HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126 Absolute Maximum Ratings TA=25°C

LB122T

Abstract: HLB122T to-126 npn switching transistor 400v
Contextual Info: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching

h437b

Abstract: HBD437T HBD438T
Contextual Info: HI-SINCERITY Spec. No. : HT200201 Issued Date : 2001.04.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic

lb 123t

Abstract: HLB123T 123T LB123T
Contextual Info: HI-SINCERITY Spec. No. : HT200402 Issued Date : 1993.05.15 Revised Date : 2006.02.20 Page No. : 1/4 MICROELECTRONICS CORP. HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits

H*772

Abstract: HT772 transistor pnp 30V 2A 1W TRANSISTOR ht772
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200209 Issued Date : 1993.05.15 Revised Date : 2002.05.08 Page No. : 1/4 HT772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HT772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver.

HTL294MT

Abstract: to-126 pnp switching transistor -400v
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200203 Issued Date : 2000.12.21 Revised Date : 2000.01.23 Page No. : 1/3 HTL294MT PNP EPITAXIAL PLANAR TRANSISTOR Description The HTL294MT is designed for high voltage low power switching applications especially for use in telephone and telecommunication

IC350

Abstract: 6718t
Contextual Info: HI-SINCERITY Spec. No. : HT200701 Issued Date : 2007.08.01 Revised Date : 2007.08.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N6718T NPN Epitaxial Planar Transistor Description TO-126 The H2N6718T is designed for general purpose medium power amplifier and switching.

transistor 7830

Abstract: IC 7830 HMJE13003 tl 7400 IC 7430
Contextual Info: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2010.03.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

HT117

Contextual Info: HI-SINCERITY Spec. No. : HT200207 Issued Date : 2002.04.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HT117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126 The HT117 is designed for use in general purpose amplifier and low-speed switching applications.

ht2000

Abstract: HTMOS HT2160 HT-2000 HT2007
Contextual Info: HTMOSTM High Temperature Products Preliminary HIGH TEMPERATURE GATE ARRAYS HT2000 FAMILY FEATURES APPLICATIONS • Specified -55 to +225°C, Operation to +300°C • Down-Hole Oil Well • Fabricated with HTMOS 0.65 µm Process • Avionics • 7K or 160K Available Gates Raw

649T

Abstract: transistor sb 772 sb 649t HSB649T part mark sb 386 amplifier
Contextual Info: HI-SINCERITY Spec. No. : HT200103 Issued Date : 2001.12.01 Revised Date : 2004.10.01 Page No. : 1/4 MICROELECTRONICS CORP. HSB649T SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126 Absolute Maximum Ratings TA=25°C

HMJE13003

Contextual Info: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

HT112

Contextual Info: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2005.12.02 Page No. : 1/5 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and low-speed switching applications.

E13003

Abstract: HMJE13003 MJE130
Contextual Info: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2006.10.26 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

HT112

Contextual Info: HI-SINCERITY Spec. No. : HT200101 Issued Date : 2000.05.01 Revised Date : 2002.03.28 Page No. : 1/4 MICROELECTRONICS CORP. HT112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT112 is designed for use in general purpose amplifier and lowspeed switching applications.