HSMT Search Results

Contextual Info: RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).

Contextual Info: RQ3E150GN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 6.1mW RDS(on) at 4.5V (Max.) 8.1mW ID 15A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: RQ3E100MN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 12.3mW RDS(on) at 4.5V (Max.) 16.8mW ID 10A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Small Mold Package (HSMT8).

Contextual Info: RQ3E080GN Nch 30V 8A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 16.7mW RDS(on) at 4.5V (Max.) 22.8mW ID 8A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSMT8).

Contextual Info: RQ3G100GN Nch 40V 10A Power MOSFET Datasheet l Outline VDSS 40V RDS on (Max.) 14.3mΩ ID ±10A PD 2W HSMT8 l Inner circuit l Features 1) Low on - resistance.

Contextual Info: MITSUBISHI ALSTTLs _ MITSUBI SHI -CDGTL LOGIC} 11 M 74ALS1 0 2 0 AP deJ hSMTaev üaiavati 4 | DUAL 4-IN P U T POSITIVE NAND BUFFER - 7 ^ ' Y 3 ~ / S ’ DESCRIPTION PIN CONFIGURATION TOP VIEW The M74ALS1020AP is a semiconductor integrated cir­ cuit consisting of two 4-input positive-logic NAND buffer

Contextual Info: I M IT S U B IS H I M IC RO CO M PUTERS i HIT4 hSMTflefl Q01b727 45Ô f1ITSUBISHI MICriPTR/mPRC M 37409P S S blE » PIGGYBACK fo r M 3 7 4 0 9 M 2 -X X X S P DESCRIPTION FEATURES The M 37409PSS is an EPROM mounted-type microcompu­ • ter which utilizes C M O S technology, and is designed for

Contextual Info: RQ3E160AD Nch 30V 16A Middle Power MOSFET Datasheet l Outline VDSS 30V RDS on (Max.) 4.5mΩ ID ±16A PD 2W HSMT8 l Inner circuit l Features 1) Low on - resistance.

Contextual Info: RQ3E180GN Nch 30V 18A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 4.3mW RDS(on) at 4.5V (Max.) 5.5mW ID 18A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

Contextual Info: RQ3E120GN Nch 30V 12A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.8mW ID 12A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) High Power Package (HSMT8).

Contextual Info: RQ3E100GN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on at 10V (Max.) 11.7mW RDS(on) at 4.5V (Max.) 15.7mW ID 10A PD 2.0W lFeatures HSMT8 lInner circuit 1) Low on - resistance. 3) Pb-free lead plating ; RoHS compliant (1) Source (2) Source (3) Source

agilent 6460

Abstract: TC265 HSMC-C265 HSMA-C265 HSML-C265 HSMT-C265 HSMX-C265
Contextual Info: Preliminary Datasheet Agilent AlInGaP chipLED Package Dimensions HSMX-C265 Notes: 1. Dimensions in mm. 2. Tolerance ± 0.1 mm unless otherwise noted. Device Selection Guide Part Number HSMA-C265 HSMC-C265 HSML-C265 HSMT-C265 Color Amber Red Orange Deep Red

Contextual Info: RQ3G130MN Nch 40V 13A Power MOSFET Datasheet lOutline VDSS 40V RDS on at 10V (Max.) 8.4mW RDS(on) at 4.5V (Max.) 11.0mW ID 13A PD 2.0W lFeatures (8) HSMT8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. 2) High Power Small Mold Package (HSMT8).

Contextual Info: RQ3E120AT Pch -30V -12A Middle Power MOSFET Datasheet l Outline VDSS -30V RDS on (Max.) 8.0mΩ ID ±12A PD 2W HSMT8 l Inner circuit l Features 1) Low on - resistance.

E070BN

Contextual Info: RQ3E070BN Nch 30V 7A Middle Power MOSFET Datasheet l Outline VDSS 30V RDS on (Max.) 27mΩ ID ±7A PD 2W HSMT8 l Inner circuit l Features 1) Low on - resistance.

Contextual Info: RQ3G130MN Datasheet Nch 40V 13A Power MOSFET lOutline VDSS 40V RDS on at 10V (Max.) 8.4mW RDS(on) at 4.5V (Max.) 11.0mW ID 13A PD 2.0W lFeatures (8) HSMT8 (7) (6) (5) (1) (2) (3) (4) lInner circuit 1) Low on - resistance. 2) High Power Small Mold Package (HSMT8).

Contextual Info: ISO-CMOS ST-BUS FAMILY MITEL* HDLC Protocol Controller Features • MT8952B _ ISSUE 5_May 1995 Formats data as per X.25 CCITT level-2 standards Ordering Information MT8952BC 28 Pin Ceramic DIP MT8952BE 28 Pin Plastic DIP

ideall crystal oscillator in microcontroller

Contextual Info: DE | 25Mb324 DDDDSbl 1 • ~D0561 CRYSTAL SEM IC ON DU CT OR DI , i r — bm*b& I'rir tm m m a m sra m D CSZ5116 tm m àm& m mm m r , Semiconductor Corporation 16-Bit 50kHz Sampling A/D Converter Features General Description • . • Monolithic CMOS A/D Converter

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01312 GaAs FET HYBRID IC DESCRIPTION OUTLINE DRAWING F A 01 3 1 2 is RF Hybrid IC designed for 8 0 0 M H z band D im ensions i small size hand held radio. FEATURES • High efficiency 3 5 % • High power • High gain

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)

M67705l

Contextual Info: b 2 4 ci fl Stí DD1733E Thb • MITSUBISHI RF POWER MODULE M67705L 400-430MHZ, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45±1 42±1 2 - R 1 . 5 ± 0 .3 Z . ¥ o _ +1 01 4>0 .4 ± 0.2 5 ±1 9+1 9+ 1 P IN : 5 + 1 8 .5 + 1 P in

HSMA-C197

Abstract: AV01-0520EN HSMC-C197
Contextual Info: HSMx-C120, HSMx-C177, HSMx-C197 and HSMx-C265 High Performance Chip LEDs Data Sheet Description Features These chip type LEDs utilize Aluminium Indium Galium Phosphide AlInGaP material technology. The AlInGaP material has a very high luminous efficiency, capable of

74hct124

Abstract: MT9160AE U317A be41
Contextual Info: i s o 2- c m o s M ITEL MT9160 5 Volt Multi-Featured Codec MFC Preliminary Information Features ISSUE 3 May 1995 O rdering Inform ation • Programmable ji-Law/A-Law Codec and Filters • Programmable CC ITT (G.711)/sign-magnitude coding • Programmable transmit, receive and side-tone