HN3C18 Search Results

2SC5322

Abstract: HN3C18FT
Contextual Info: T O S H IB A HN3C18FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C18FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)

Contextual Info: TO SHIBA HN3C18FT TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FT Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TO SHIBA HN3C18FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : N F = 1.4dB (f=2G H z) • High Gain : |S2 i el2 = 10dB (f=2G H z)

HN3C18F

Abstract: E33 marking
Contextual Info: TOSHIBA HN3C18F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 18 F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: HN3C18FT TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M í f 1RFT • ■ u m MF ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super

Contextual Info: TOSHIBA HN3C18FU TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2G Hz) • High Gain : |S2 i e |2 = 10dB (f=2G Hz)

HN3C18FU

Contextual Info: TOSHIBA HN3C18FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2G Hz) • High Gain : |S2 i e |2 = 10dB (f=2G Hz)

HN3C18

Contextual Info: TOSHIBA HN3C18F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.8 CHIP : fT = 16GHz series • + 0.2 0.3 - + 0.2 1 .6 -0 .1 Including Two Devices in SM6 (Super Mini Type with 6 Leads)

Contextual Info: TOSHIBA TENTATIVE HN3C18FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : |S2 l e|2= 10dB (f=2GHz)

2SC5322

Abstract: HN3C18FT
Contextual Info: TO SH IBA TENTATIVE HN3C18FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FT Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 1.25 ± 0.1

HN3C18FU

Contextual Info: TO SH IBA HN3C18FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FU Unit in mm VH F-U HF LOW NOISE AMPLIFIER APPLICATIONS 2.1 CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain : |S2i e|2= 10dB (f=2GHz)

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz