HN2C12 Search Results

HN2C12FU

Contextual Info: TOSHIBA HN2C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini ,6pins package : TU6

2SC5096

Abstract: HN2C12FT
Contextual Info: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6

Contextual Info: T O SH IB A HN2C12FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 7 f 1 7 FT • ■ m 'm ■ ■ Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ±0.1 • TWO devices are built in to the super-thin and ultra super mini ,6pins package : TU6

H123

Abstract: HN2C12FU
Contextual Info: TOSHIBA HN2C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)

2SC5096

Abstract: HN2C12FT
Contextual Info: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6

Contextual Info: TOSHIBA HN2C12FU T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri7Fll • ■ u 'm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL

2SC5096

Abstract: HN2C12FT
Contextual Info: T O S H IB A TENTATIVE HN2C12FT TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 2 FT Unit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini ,6pins package : TU6

HN2C12FU

Abstract: H123
Contextual Info: TO SH IBA HN2C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING

Contextual Info: TOSHIBA HN2C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FU Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA TENTATIVE HN2C12FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN2C12FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 1.25 ± 0.1

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz