HN29 Search Results

Contextual Info: HN29W6411 Series More than 16,057 sectors 67,824,768 bits CMOS AND Flash Memory (Mostly Good Memory) HITACHI Preliminary Rev.0.7 March 28, 1996 Description The Hitachi HN29W6411 is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3V power supply. The functions are controlled by

Contextual Info: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865C (Z) Rev. 1.0 Oct. 20, 1998 Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are

Contextual Info: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase

o2-a2

Abstract: Hitachi DSA00196
Contextual Info: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit ADE-203-870A (Z) Preliminary Rev. 0.1 Mar. 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are

AH10T

Abstract: hn29w12811t-50 Hitachi DSA00170
Contextual Info: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865D€ (Z) Rev. 21.0 FebQet. 20, 1999K Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are

MO-142DD

Contextual Info: HN29WT800 Series HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537A Z Rev. 1.0 May. 9, 1997 Description The Hitachi HN29WT800 Series, HN29WB800 Senes are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

hn29w256ah

Abstract: Hitachi DSA00276
Contextual Info: HN29W256AH03TE-1 Controller for AND Flash Memory ADE-203-1147 Z Preliminary Rev. 0.0 Jan. 27, 2000 Description HN29W256AH03TE-1 is a controller IC for flash ATA card. This IC is manufactured using Hitachi 0.5 µm CMOS technology, and integrates control logic with SH1•CPU core. This IC is able to control maximum 32

Hitachi Stacked package memory

Abstract: HN29W16814 SA Series HITEC 527 PD513 Hitachi DSA00196
Contextual Info: HN29W16814 Series 168M AND type Flash Memory More than 21,074-sector 86,319,104-bit x 2 ADE-203-943 (Z) Preliminary Rev. 0.0 Jul. 21, 1998 Description The Hitachi HN29W16814 Series is stacked 2 chips Hitachi 84-Mbit Flash memory (HN29W8411) that are CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase

Contextual Info: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0300Z Rev. 3.00 Jun.03.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective

Hitachi DSA00281

Contextual Info: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are

td 1410

Abstract: HN28F101 HN28F101FP-12 HN28F101FP-15 HN28F101FP-20 HN28F101P-12 HN28F101P-15 HN28F101P-20 HN28F101-15
Contextual Info: NEW PRODUCT HN28F101 Series Changed from HN29C101B 128K X 8-bit CMOS Flash Memory ^ H IT A C H I Preliminary Rev. 4.4 October 14,1991 The Hitachi HN28F101 is a 131,072 x 8-bit CMOS Flash Memory that is capable of in­ system electrical chip erasure and reprogramming.

HN29V25611A

Abstract: if multiplexer
Contextual Info: HN29V25611A Series Block Diagram Sector address buffer X-decoder 16384 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • Multiplexer 16057 - 16384 2048 + 64 • • Data input buffer • • Input data control • •

Contextual Info: HN29W6411A Series Block Diagram Sector address buffer X-decoder 16384 x 512 + 16 × 8 memory matrix Data register (512 + 16) •• I/O0 to I/O7 • • 16057 - 16384 512 + 16 • Multiplexer • Data input buffer • • Input data control • • Y-gating

Hitachi DSAUTAZ006

Contextual Info: HN29W25611S Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1233B (Z) Rev. 2.0 Mar. 8, 2001 Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled

Hitachi DSAUTAZ006

Contextual Info: HN29V51211 Series Package Dimensions HN29V51211T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.08 *Dimension including the plating thickness Base material dimension 44 0.80 20.00 ± 0.20 0° – 8°

Contextual Info: HN29V51211T-50H Pin Arrangement 48-pin TSOP VCC NC*1 NC*1 NC*1 VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE NC*1 VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14

TFP-48DA

Abstract: Hitachi DSAUTAZ006
Contextual Info: HN29V102414 Series Package Dimensions HN29V102414T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 42 0.80 20.00 ± 0.20 0° – 8°

Hitachi DSAUTAZ006

Contextual Info: HN29V51211 Series Package Dimensions HN29V51211T Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 0.80 20.00 ± 0.20 0° – 8°

Hitachi DSAUTAZ006

Contextual Info: HN29W12811BP Series 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADE-203-1260 (Z) Preliminary Rev. 0.0 Apr. 18, 2001 Description The Hitachi HN29W12811 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are

Hitachi DSAUTAZ006

Contextual Info: HN29V25611A Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1275B (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

Contextual Info: HN29V102414 Series Pin Arrangement 48-pin TSOP VCC*2 NC*1, 2 NC*1, 2 NC*1, 2 VSS*2 RES*2 RDY/Busy*2 SC*2 OE*2 I/O0*2 I/O1*2 I/O2*2 I/O3*2 VCC*2 VSS*2 I/O4*2 I/O5*2 I/O6*2 I/O7*2 CDE*2 WE*2 CE*2 NC*1, 2 VSS*2 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33

Contextual Info: HN29V25611A Series Pin Arrangement 48-pin TSOP VCC NC*1 NC*1 NC*1 VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE NC*1 VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13