HN1D03F Search Results
HN1D03F Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| HN1D03F |
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Application Specific Diode Array | Original | 206.73KB | 4 | ||
| HN1D03F |
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Silicon Epitaxial Planar Type | Original | 148.16KB | 3 | ||
| HN1D03FTE85LF |
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Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SM6 | Original | 4 | |||
| HN1D03FU |
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Silicon epitaxial planar type diode for ultra high speed switching application | Original | 215.77KB | 5 | ||
| HN1D03FU |
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DIODE | Scan | 2.16MB | 4 | ||
| HN1D03FU,LF |
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Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 80MA US6 | Original | 256.64KB | |||
| HN1D03FU(T5L,F,T) |
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Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC/CA US6 | Original | 5 | |||
| HN1D03FU(TE85L,F) |
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HN1D03FU - Diode Switching 85V 0.08A 6-Pin US T/R | Original | 273.02KB | 5 |
HN1D03F Price and Stock
Toshiba America Electronic Components HN1D03FTE85LFDIODE ARRAY GP 80V 100MA SC-74 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1D03FTE85LF | Cut Tape | 19,716 | 1 |
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HN1D03FTE85LF | 1,903 |
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HN1D03FTE85LF | 188 |
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Toshiba America Electronic Components HN1D03FU,LFDIODE ARRAY GP 80V 80MA US6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1D03FU,LF | Cut Tape | 3,554 | 1 |
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HN1D03FU,LF | Reel | 16 Weeks | 3,000 |
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HN1D03FU,LF | 2,763 |
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Toshiba America Electronic Components HN1D03FU,LF(TDiode Switching Si 85V 0.1A 6-Pin US T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1D03FU,LF(T | 2,555 | 650 |
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HN1D03FU,LF(T | Cut Tape | 2,990 | 1 |
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HN1D03FU,LF(T | 13 Weeks | 3,000 |
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Toshiba America Electronic Components HN1D03FU TE85R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1D03FU TE85R | 6,000 |
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Toshiba America Electronic Components HN1D03F-T5LT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1D03F-T5LT | 3,000 |
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HN1D03F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HN1D03FContextual Info: T O S H IB A HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm + 0.2 2.8 - 0.3 Built in Anode Common and Cathode Common. Unit 1 3 • Low Forward Voltage Q l, Q2 : Vp = 0.90V (Typ.) • Fast Reverse Recovery Time |
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HN1D03F HN1D03F | |
HN1D03FContextual Info: HN1D03F 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D03F ○ 超高速スイッチング用 単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準) |
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HN1D03F 100mA HN1D03F | |
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Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03FU | |
HN1D03FContextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03F HN1D03F | |
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Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1D03FU ULTRA HIGH SPEED SW ITCHING APP LIC A TIO N . • U nit in mm Built in Anode Common and Cathode Common. U nit 1 • Low Forward Voltage Q l, Q2 : Vp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr = 1.6ns (Typ.) |
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HN1D03FU 100mA | |
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Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1D03F Unit in ULTRA HIGH SPEED SWITCHING APPLICATION rm + 0.2 2.8 - 0 . 3 . Built in Anode Common and Cathode Common. 1.6 Unit 1 + 0.2 - 0.1 □ 3 . Low Forward Voltage Q1,Q2 Vp=0.90V Typ. . Fast Reverse Recovery Time Ql,Q2 |
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HN1D03F 100mA | |
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Contextual Info: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 Í 0.1 U nit 1 1.25±0.1 Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.) |
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HN1D03FU D03FU | |
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Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03FU | |
HN1D03FU
Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
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HN1D03FU HN1D03FU TOSHIBA "ULTRA HIGH SPEED" DIODE | |
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Contextual Info: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 db0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr= 1.6ns (Typ.) |
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HN1D03FU N1D03FU 100UG | |
HN1D03FContextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03F HN1D03F | |
HN1D03FUContextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03FU HN1D03FU | |
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Contextual Info: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1 n n 3F m m m 'm m mmr w mm • Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Built in Anode Common and Cathode Common. + 0.2 .1.6 -0.1. Unit 1 • Low Forward Voltage • Fast Reverse Recovery Time |
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HN1D03F | |
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Contextual Info: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm + 0.2 Built in Anode Common and Cathode Common. 2.8-0.3 + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) • |
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HN1D03F | |
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Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03F | |
HN1D03FUContextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03FU HN1D03FU | |
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Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03FU 100mA | |
HN1D03FUContextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03FU HN1D03FU | |
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Contextual Info: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage |
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HN1D03FU | |
HN1D03FUContextual Info: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. 2.1 db0.1 U n it 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.) |
OCR Scan |
HN1D03FU N1D03FU HN1D03FU | |
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Contextual Info: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm Built in Anode Common and Cathode Common. 2 .8 + 0.2 0.3 - + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) • |
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HN1D03F | |
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Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) |
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HN1D03F | |
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Contextual Info: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.Ü0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.) |
OCR Scan |
HN1D03FU D03FU | |
HN1D03FUContextual Info: HN1D03FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D03FU ○ 超高速スイッチング用 単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準) |
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HN1D03FU HN1D03T 100mA HN1D03FU | |