HN1B01F Search Results

HN1B01F

Contextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)

HN1B01FU

Contextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)

Contextual Info: T O S H IB A TO SH IB A TRANSISTOR HN1B01FU SILICON PNP E PITA XIA L TYPE PCT PROCESS SILICON NPN E P ITA X IA L TYPE (PCT PROCESS) H N 1 B 01 F U Unit in mm A U D IO FR E Q U E N C Y G E N E R A L PURPOSE A M P L IF IE R A P P L IC A T IO N S . 2 . 1± 0.1

Contextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max)

HN1B01FDW1T1

Abstract: 318F SMD310
Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

Contextual Info: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1

transistor con HFE 400

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B0 1 F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1 .6 - 0 .1 3- Ql : • High Voltage and High Current

Contextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)

Contextual Info: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1

318F

Abstract: HN1B01FDW1T1 SMD310
Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: 3A

HN1B01FU

Contextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)

ic audio axign

Contextual Info: TOSHIBA HN1B01F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1RÍ11F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Ql ! High Voltage and High C urrent ». Axign u : VC E O = - 50V> IC = -1 5 0 m A (Max.)

Contextual Info: TO SHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1B01F U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER 2 .8 APPLICATIONS. 1. 6 + 0.2 - 0.3 + 0.2 - 0.1 !• Ql : oo t-EB 2 High Voltage and High C urrent

Contextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400

Contextual Info: HN1B01FU SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE U n it in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Q1 : • High Voltage and High Current : V q e o = -5 0 V , I q = - 150mA Max. • High hpE : ^FE = 120~400

HN1B01FU

Contextual Info: HN1B01FU 東芝トランジスタ シリコンPNP･NPNエピタキシャル形 PCT方式 HN1B01FU ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = －50V コレクタ電流が大きい。 : IC = －150mA (最大) 電流増幅率が高い。

318F

Abstract: HN1B01FDW1T1 HN1B01FDW1T1G
Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • 6 High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1

Contextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)

TRANSISTOR MARKING TE US6

Abstract: 125H HN1B01FU
Contextual Info: T O S H IB A TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 . 1± 0.1 Q1 : • High Voltage and High Current : VCEO = —50V, I q = —150mA (Max.)

HN1B01F

Contextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: l High voltage and high current : VCEO = −50V, IC = −150mA (max)

HN1B01F

Contextual Info: HN1B01F 東芝トランジスタ シリコンPNP・NPNエピタキシャル形 PCT方式 HN1B01F ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = －50V コレクタ電流が大きい。 : IC = －150mA (最大) 電流増幅率が高い。

HN1B01F

Contextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 R fl 1 F 11 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1± 0.1 1.2 5 ±0.1 Q1 : • High Voltage and High. Current

On Semiconductor MARKING DIAGRAM SOD-123

Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A