HN1A01 Search Results

Contextual Info: SILICON PNP EPITAXIAL TYPE HN1A01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER + 0.2 2.8 -0 .3 APPLICATIONS. + 0.2 1 . 6 - 0.1 • Small Package Dual Type -s • High Voltage and High Current : VCEO= -50V , I q = —150mA (MAX.) &• -EE 2 -E3-

Contextual Info: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE: hFE = 120 to 400

HN1A01FU

Abstract: le-2-g
Contextual Info: TOSHIBA HN1A01 FU TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H N 1 A 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 . 1± 0.1 1.25 ± 0 .1 • Small Package (Dual Type) • High Voltage and High Current : v CE0 = _ 50V, IC= - 150mA (MAX.)

HN1A01FE

Contextual Info: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE: hFE = 120~400

HN1A01F

Contextual Info: HN1A01F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ HN1A01F ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 z z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。

Contextual Info: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO =−50V, IC =−150mA (max) z High hFE: hFE = 120 to 400

HN1A01F

Contextual Info: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = −50 V, IC = −150 mA (max) High hFE: hFE = 120~400

Contextual Info: T O SH IB A H N 1A 0 1F TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HN1A01F A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package (Dual Type) • High Voltage and High Current : VC E0= —50V, le = - 150mA (MAX.)

Contextual Info: TOSHIBA HN1A01F TO SHIBA TRANSISTOR n1 F SILICON PNP EPITAXIAL TYPE PCT PROCESS H N 1A Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package (Dual Type) • High Voltage and High Current : V c E O = -5 0 V , I c = -150m A (MAX.)

Contextual Info: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120 to 400

HN1A01F

Contextual Info: TOSHIBA HN1A01F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HN 1A 0 1 F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1 . 6 - 0.1 • Small Package (Dual Type) • High Voltage and High Current : VcEO = - 50V, I c = - 150mA(MAX.)

HN1A01F

Contextual Info: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120~400

HN1A01FE

Contextual Info: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE: hFE = 120~400

Contextual Info: SILICON PNP EPITAXIAL TYPE HN1A01FU U nit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 1 .2510.1 . • Small Package Dual Type • High Voltage and High Current : V c e O = -5 0 V , Ic = - 150mA (MAX.) • High hpE : hpE = 120—400 • Excellent hjrj; Linearity

HN1A01F

Contextual Info: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) z High hFE: hFE = 120~400

HN1A01FU

Contextual Info: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO =−50V, IC =−150mA (max) z High hFE: hFE = 120~400

HN1A01FU

Contextual Info: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO =−50V, IC =−150mA (max) l High hFE: hFE = 120~400

HN1A01FE

Contextual Info: HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE: hFE = 120~400

Contextual Info: HN1A01 FU T O SH IB A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H N 1 A 0 1 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 .1± 0.1 1.25 ±0 .1 • Small Package (Dual Type) • High Voltage and High Current : V c e O = - 50V, Ic= -150m A (MAX.)

HN1A01FU

Contextual Info: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO =−50V, IC =−150mA (max) z High hFE: hFE = 120~400

HN1A01F

Contextual Info: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (dual type) l High voltage and high current : VCEO = −50V, IC = −150mA (max) l High hFE: hFE = 120~400

Contextual Info: TOSHIBA HN1A01FU TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HN1 AÍ11FII U nit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ± 0.1 1.25 ±0.1 • Small Package (Dual Type) P 3 - £ s • High Voltage and High C urrent

HN1A01FE

Contextual Info: HN1A01FE 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 HN1A01FE ○ 低周波増幅用 単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵してい ます。 z 高耐圧です。

HN1A01FU

Contextual Info: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO =−50V, IC =−150mA (max) High hFE: hFE = 120~400