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HMF2402 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LM1400E-77.760M Contextual Info: HMF2402 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)14 V(BR)GSS (V)-8 I(D) Max. (A)760m P(D) Max. (W)8.0 Maximum Operating Temp (øC)180õ I(DSS) Min. (A)410m I(DSS) Max. (A)760m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.250mÂ	Original	HMF2402 LM1400E-77.760M	PDF
HMF2402 Abstract: HMF-2400 hmf 2402 hmf-2402 power transistor gaas hmf2400 Contextual Info: HARRIS m SEMICONDUCTOR r V T? D ^ \| 4 3 D a E b ci 0000035 ' T ' S I ~ * L 5 \| HMF-2400 POWER GaAs FET — * 2-14 GHz 6.0dB Gain N O V EM B ER 1987 J PRODUCT DATA HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE +30.5dBm Typical Linear Power □ High Efficiency Performance, 30%	OCR Scan	HMF-2400 9-24000-B® HMF2402 hmf 2402 hmf-2402 power transistor gaas hmf2400	PDF
hmf-2402 Abstract: hmf-24 HMF24020-200 Contextual Info: SAMSUNG ELECTRONICS INC HARRIS büE D 7^4142 D011Ö63 IGfi HMF-24020 -200 Power Optimized GaAs FET 2-12 GHz PRODUCT DATA Features • +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers • Power Optimized Design Provides	OCR Scan	HMF-24020 F-24020-200 HMF24000-200. hmf-2402 hmf-24 HMF24020-200	PDF
HMF24020-200 Abstract: F24000 hmf-2402 harris 723 HMF-24020 Contextual Info: 4bE D HARRIS Mil SEMICONDUCTOR HARRIS • 000052^ 5 ■ HMS HMF-24020 Power Optimized GaAs FET PRODUCT DATA 2 -1 2 GHz Features * +30.5 dBm Output Power with 5 dB Associated Gain at 8 GHz * Chip Devices are Selected from Standard Military Grade Wafers	OCR Scan	HMF-24020 F-24020-200 F24000-200. HMF24020-200 F24000 hmf-2402 harris 723 HMF-24020	PDF