HL6344G Search Results
HL6344G Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| HL6344G | Hitachi Semiconductor | Laser Diode, 10mW Power, 640nm Wave Length, 20mA Current | Original | 37.06KB | 5 | ||
| HL6344G | OpNext | Circular Beam Low Operating Current | Original | 105.73KB | 5 | ||
| HL6344G98 | OpNext | Laser Diode, 10mW Power, 640nm Wave Length, 20mA Current | Original | 37.06KB | 5 |
HL6344G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
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d-85622opdb-090103opnexthl1359cp+8 | |
LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
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opd-010908ld5033opnexthl6366dg+7 | |
HL6343G
Abstract: HL6344G
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hl6343g/44gode-208-1528bhl6343ghl6344g | |
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Contextual Info: HL6343G/44G ODE2020-00 M Rev.0 Aug. 01, 2008 Circular Beam Low Operating Current Description The HL6343G/44G are 0.63 m band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser |
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hl6343g/44gode2020-00hl6343ghl6344g | |
opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
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d-85622opdb-09opnextlaser diode dvd 100mw+8 | |
laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
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200mwlaser diode 940 nm 200mwld503380km* opnext+7 | |
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Contextual Info: HL6343G/44G ODE-208-018 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6343G/44G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser |
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hl6343g/44gode-208-018hl6344ghl6343g | |
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Contextual Info: HL6343G/44G ODE-208-018A Z Rev.1 Feb. 01, 2008 Circular Beam Low Operating Current Description The HL6343G/44G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser |
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hl6343g/44gode-208-018ahl6344ghl6343g | |
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Contextual Info: HL6343G/44G Circular Beam Low Operating Current ODE-208-1528B Z Rev.2 Sep 2003 Description The HL6343G/44G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are |
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hl6343g/44gode-208-1528b | |
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Contextual Info: HL6343G/44G ODE-208-018 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6343G/44G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser |
Original |
hl6343g/44gode-208-018hl6343ghl6344g | |
HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
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2008bd-85622hl6362mghl6355mg+8 | |
dfb activation energy
Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
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ode-408-001ihl1570afhl1569afdfb activation energy+9 | |
sld1233
Abstract: SLD1233VL advantest TR6143 DIODE 36G marking code SLD68518460 DL-3148-234 laser diode DVD Mechanical Layout 4039-01 SICK cross refeRENCE SLD67018250
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ade-308-007csld1233sld1233vladvantest tr6143+7 | |
HL6343G
Abstract: HL6344G
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hl6343g/44gode-208-018hl6344ghl6343g | |
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