HJ MARKING Search Results

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

DPG60C300HB

Abstract: IXYS TO-247 DATE CODE DPG60C300PC DPF60C300HB DPG60C300QB ISOPLUS247 calculation of diode snubber DPG80C300 DPG60C300HJ
Contextual Info: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:

DPG60C300HJ

Contextual Info: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:

DPG60C300H

Abstract: DPG60C300HB DPG60C300QB ISOPLUS247 TFR 600 DPF60C300HB DPG60C300PC
Contextual Info: DPG 60 C 300 HJ V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

XWs transistor

Abstract: xws 03
Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm

1462041-1

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 1 DWN DATE REVISED PER ECO-11-005150 UR-marking new REVISED PER ECR-13-014508 TE-Logo HMR AK AK RK UKo UKo 25MAR2011 09DEC2011 16SEP2013 APVD 3 + Relay - bottom view

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 1 DWN DATE REVISED PER ECO-11-005150 UR-marking new REVISED PER ECR-13-014508 TE-Logo HMR AK AK RK UKo UKo 25MAR2011 09DEC2011 16SEP2013 APVD 3 + Relay - bottom view

NE334S01

Abstract: transistor C 2240 K 1358 fet transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

7168-m

Abstract: IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P
Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR

NE334501

Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR A7 A8 A9 A10 1 2 DESCRIPTION additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo RK UKo UKo 10OCT2008 25MAR2011

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR A7 A8 A9 A10 1 2 DESCRIPTION additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo RK UKo UKo 10OCT2008 25MAR2011

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A4 A5 A6 A7 1 2 additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo RK UKo UKo 10OCT2008 25MAR2011

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR A7 A8 A9 A10 1 2 DESCRIPTION additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo UKo UKo UKo 10OCT2008 25MAR2011

40MAG

Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD CO ;u HIGH ASSOCIATED GAIN:

transistor NEC D 822 P

Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

K 1358 fet transistor

Abstract: NE334S01 nec 2761 s11 diode shottky C10535E NE334S01-T1 NE334S01-T1B
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A4 A5 A6 A7 1 3 Doc change D02309-DOK51 to C-1462034-2 change marking REVISED PER ECO-11-005150 REVISED PER ECO-13-009556 4 DWN DATE HD HD HMR AK UKo UKo RK UKo 30Jan2006 28Jul2006

Contextual Info: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 A5 1 Doc change D02239-DOK51 to C-1462033-2 change marking REVISED PER ECO-11-005150 REVISED PER ECO-13-009556 4 3 2 DWN DATE HD HD HMR AK UKo UKo RK UKo 30Jan2006 28Jul2006