HITACHI CONTROL MODULE Search Results

PWM BUFFER

Abstract: Hitachi motor stepper Hitachi DSA0071 0XFC00
Contextual Info: Hitachi Europe Ltd. Version: app 100/1.0 APPLICATION NOTE Hitachi H8S/2636 F-ZTATTM Dual Channel On-Chip HCAN Hitachi Controller Area Network App Note : Motor Control PWM Timer Introduction: This application note details the Motor Control PWM Timer found on the Hitachi H8S/2636F 16-bit

PF0120

Contextual Info: HITACHI PF0120 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 1 mA Typ • High speed switching: 1.5 flsec Typ • Wide power control range: 90 dB Typ Pin Arrangement

c2330 equivalent

Abstract: c2330
Contextual Info: HITACHI PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM C LASS2 890 to 915 M Hz Features • Low power control current: 0.9 m A Typ • High speed switching: 1.5 isec Typ • Wide power control range: 100 dB Typ Pin Arrangement

PF0231A

Abstract: BL01RN1-A62-001
Contextual Info: HITACHI PF0231A MOS FET Power Amplifier Module for ADC Handy Phone HITACHI Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for rc/4-DQPSK • Simple Pout control: Controllable by VAPC

Contextual Info: HITACHI PFIOIOA MOS FET Power Amplifier Module for P/C LAN HITACHI Features • Frequency range: 806 to 824 MHz • Surface mounted small package: 1 cc, 3g with shielded cover • Loe voltage operation: 6 V • Low power control current: 300 |iA Typ Pin Arrangement

PF0031

Abstract: hitachi HD PCB
Contextual Info: HITACHI PF0031 MOS FET Power Amplifier Module for Mobile Phone HITACHI Application PF0031: For NM T900 890 to 925 MHz Features • High stability: Load VSW R = 20:1 • Low power control current: 400 ¡iA • Thin package: 5 mm t Pin Arrangement ADE-208-461 Z

vapc

Abstract: ADE-208-341C
Contextual Info: HITACHI PF0075A MOS FET Power Amplifier Module for AMPS Handy Phone HITACHI ADE-208-341C Z Product preview 4th. Edition July 1996 Features • 2 stage amplifier • High efficiency: 55 % Typ at 1.2 W • Low power control current: 500 |iA • Reflowable surface mounted small package: 0.6 cc

APC 600 Va

Contextual Info: HITACHI PF0231 MOS FET Power Amplifier Module for ADC Handy Phone HITACHI ADE-208-283D Z Preliminary 5th. Edition July 1996 Application For ADC class3 824 to 849 MHz Features • High efficiency: 47% Typ for CW 43% Typ for n/4-DQPSK • Simple Pout control: Controllable by VAPC

bl01rn1-a62-001

Abstract: BL01RN1-A62
Contextual Info: HITACHI PF0341A Series MOS FET Power Amplifier Module for UHF Band HITACHI ADE-208-338C Z 4th. Edition July 1996 Features • Small package: 30 x 10 x 5.9 mm • High output power at low voltage: 2 W Typ at 4.8 V • Low power control current: 200 |iA Typ

PF0030

Abstract: Hitachi PF0030
Contextual Info: HITACHI PF0030 Series MOS FET Power Amplifier HITACHI Features • • High stability: Load VSW R = 20 : 1 • • Low power control current: 400 |iA • • Thin package: 5 mmt Ordering Information Type No Operating Frequency Application PF0030 824 to 849 MHz

almit

Contextual Info: HITACHI PF0025 MOS FET Power Amplifier for AMPS Handy Phone HITACHI Features • Surface mounted small package: 1 cc, 3 g with shielded cover • High efficiency: 47% Typ at actual output condition 1.2 W • Low voltage operation: 6 V • Low power control current: 300 |iA

almit

Abstract: PF0140
Contextual Info: PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI Application Rev. 0 Sep. 1993 Pin Arrangement For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 j s TVp Wide power control range: 80 dB Typ

HITACHI 1SS106

Abstract: 1ss106 application note 1SS106 bl02rn1-r62
Contextual Info: PF0120 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM CLASS2 890 to 915 MHz Preliminary S e- ° Pin Arrangement • RF-B2 Features • Low power control current 1 mA Typ • High speed switching 1.5 jsec Typ • Wide power control range 90 dB Typ

power module hd 110

Abstract: Power Amplifier Module for GSM PF0130 shin-etsu Chemical
Contextual Info: PF0130 MOS FET Power Amplifier Module for GSM Mobile Phone HITACHI Application For GSM CLASS3 890 to 915 MHz Preliminary Rev. 0 Sep. 1993 Pin Arrangement • RF-B2 Features • Low power control current 1 mA Typ • High speed switching 1.5 isec Typ • Wide power control range 90 dB Typ

almit

Abstract: GSM RF module Power Amplifier Module for GSM PF0140 3lu10 VA-PC 10
Contextual Info: H ITACH I PF0140 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-462 Z 1st. Edition July 1996 Application For GSM class4 890 to 915 MHz Features • • • • Low power control current: 1.5 mA Typ High speed switching: 1.2 (Is Typ Wide power control range: 80 dB Typ

TL451

Abstract: uc3842 half bridge sop16 pwm step down Voltage Regulator sop8 2a push pull zvs driver TL431ACLP PWM IC 8 PIN DIP HALF BRIDGE HA17385 cross reference HA17384
Contextual Info: SPS Devices Catalog that includes only former Hitachi products among Renesas Technology products. Switching Power Supply Control ICs Products April, 2003 Multi Purpose Semiconductor Device Div. Analog & Discrete Semiconductor BU Renesas Technology Corp. SPS Devices

LM032L

Abstract: HD44780A 16C64 lcd LM032L lm032l lcd AN582 AN587 HD44780 PIC16C5X PIC16CXX
Contextual Info: Interfacing to an LCD Module AN587 Interfacing to an LCD Module INTRODUCTION TABLE 1: CONTROL SIGNAL FUNCTIONS This application note interfaces a PIC16CXX device to the Hitachi LM032L LCD character display module. This module is a two line by twenty character display. LCD

40x4 lcd hd44780

Abstract: hitachi 40x4 hd44780 16 pin hd44780 display 13 pin lcd display display pinout hitachi hd44780 display lcd 14 pinout LCD DISPLAY PINOUT rs232 pinout Hitachi 40X4 LCD
Contextual Info: Farnell Order Code 139-890 Function The unit is designed to interface between an RS232 port and a standard LCD display module based on the Hitachi HD44780 controller. Control codes are interpreted while standard ASCII characters are passed through to the display.

PF0012

Abstract: HITACHI PF0012
Contextual Info: PF0012 blE D • 44^205 0013b01 3Sfl ■ HIT4 HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POWER MOS FET MODULE UHF Band 872-905 MHz ■ FEATURES • • • Include Input and Output Matching Circuit Easy to Control Output Power Superior to Stability at Load Mismatching

61256FS

Contextual Info: ADE-203-460A Z HB66C3264BA Series 32k x 64-bit Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output HITACHI Rev. 1.0 December 29, 1995 Description The HB66C3264BA has been developed as an optimized • Internal input registers (address, data, control)

654-632

Abstract: 4X40 LCD HD44780 LCD ASCII CODE c source code hd44780 4x40 LCD 4x40 hitachi hd44780 4X40 LCD bluebird Bluebird Electronics HD44780
Contextual Info: Farnell Order Codes 654-632 and 882-884 Function The unit is designed to interface between an RS232 port and a standard LCD display module based on the Hitachi HD44780 controller. Control codes are interpreted while standard ASCII characters are passed through to the display.

Contextual Info: PFIOIOA MOS FET Power Amplifier Module for P/C LAN HITACHI Features • • • • Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Low voltage operation: 6 V Low power control current: 300 jiA Typ Pin Arrangement

F0231-A

Contextual Info: PF0231A MOS FET Power Amplifier Module for ADC Handy Phone HITACHI Application For ADC class3 824 to 849 MHz Features • Low voltage operation 4.8 V • High efficiency: 42% Typ for CW 34% Typ for Jt/4-DQPSK • Simple Pout control: Controllable by VAPC •

svi 2003

Abstract: 915MH svi 2003 a PF0011 S85M 915m1 885Mhz 915p Hitachi Scans-001
Contextual Info: blE D PF0011 M^baOS 00135cia T33 • H I T M HITACHI/ OPTOELECTRONICS HIGH FREQUENCY POW ER MOS F E T MODULE UHF Band 890-915 MHz ■ FEATURES # Include Input and Output Matching Circuit # Easy to Control Output Power # Superior to Stability at Load Mismatching