HUEY JANN ELECTRONIC
Abstract: 107D S370 HIRPB8
Contextual Info: HI-POWER INFRARED LED SPECIFICATION HIRPB8-1Gx Drawn by Checked by Approved by RoHS Conformity DATE:2009/11/10 REV:A HUEY JANN ELECTRONICS INDUSTRY CO., LTD. No.27 Line 466 Sec.2,Canng-nan Rd. Wu-chi Town Taichung Shien, Taiwan, R.O.C. TEL:+886-4-26393976
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huey jann electronic107ds370hirpb8 |
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Infrared led 850
Abstract: 850 nm LED HIRPD8-1G MA291
Contextual Info: High Power Infrared Emitter Cg p Ta=25°C Wavelength Device No Forward Voltage Radiant Output Power mw/sr) View Lens Color Xp(nm) Angle Typ(v) IF(mA) Minimum Typical IF(mA) 291/2 2.8 / 10.3 rr4 7.25 HIRPB8-1G * / 850 W ater clear 1.6 1000 35.0 70.0 1000
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infrared led 850850 nm ledhirpd8-1gma291 |
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hirpd81g
Abstract: HIRPD8-1G Infrared led 850 hirpd8
Contextual Info: High Power Infrared Emitter RoHS Conformity Ta=25°C Wavelength Device No Forward Voltage Radiant Output Power mw/sr View Lens Color A.p(nm) Angle Typ (V) IF(mA) Minimum Typical IF(mA) 261/2 LED Dice Cathode Mark 1.2 J0.3 7.25 14.5 HIRPB8-1G 850 water clear
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hirpd81ghirpd8-1ginfrared led 850hirpd8 |
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HIRPD8-1G
Abstract: hirpd81g HIRPB8 DSASL0045536.txt 850 nm LED led c 850 nm high power LED LED DICE hirpd8
Contextual Info: High Power Infrared Emitter o Ta=25 C Wavelength Lens Color View Angle Typ V lp(nm) IF(mA) Minimum Typical IF(mA) 2q1/2 0.3 2.8 1.5 2.3 5.4 2.0 LED Dice Cathode Mark 1.2 7.9 Device No Forward Voltage Radiant Output Power (mw/sr) 0.8 7.25 UNIT:mm 14.5 HIRPB8-1G
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hirpd8-1ghirpd81ghirpb8dsasl0045536.txt+5850 nm ledled c850 nm high power ledled dicehirpd8
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