HIGH SPEED OUTPUT BUFFER IC 5V Search Results

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

Contextual Info: TOSHIBA 3. [3 ] Product Outline of The TC74VH C/VH CT Series Product Outline of The TC74VHC/VHCT Series 3-1 Features 1 High Speed Operation / Low Voltage Operation TC74VHC series at 5V operation is faster than TC74AC series at light load capacitance. The TC74VHC series utilizes 1.0//m silicon gate CMOS technology and the "quick and

Contextual Info: Document No.: FT_000060 FT4232H QUAD HIGH SPEED USB TO MULTIPURPOSE UART/MPSSE IC Datasheet Version 2.01 Clearance No.: FTDI#78 Future Technology Devices International Ltd FT4232H Quad High Speed USB to Multipurpose UART/MPSSE IC The FT4232H is FTDI’s 5th generation

Contextual Info: Document No.: FT_000061 FT2232H DUAL HIGH SPEED USB TO MULTIPURPOSE UART/FIFO IC Datasheet Version 2.01 Clearance No.: FTDI#77 Future Technology Devices International Ltd FT2232H Dual High Speed USB to Multipurpose UART/FIFO IC • The FT2232H is FTDI’s 5th generation

speedometer

Abstract: vehicle Speed Sensor quad scaler speed sensor SA 1N4005 HIP9020 HIP9020AB HIP9020AP sensor input speedoMETER
Contextual Info: HIP9020 Programmable Quad Buffer with Pre and Post Scaler Dividers October 1993 Features Description • Sine Wave Speedometer Input The HIP9020 is a Vehicle Speed Sensor VSS Buffer IC. It receives sinusoidal vehicle speed information from a speedometer signal source. The signal is amplified and

Contextual Info: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V VPP ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate ■ 0.48 MB/sec Sustainable Write Transfer Rate ■ Configurable x8 or x16 Operation

tc183

Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
Contextual Info: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM2018AP-25' TMM2018AP-35, TMM2018ÄP-45 iDESCRIPTIONl The TMM2018AP is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power

Contextual Info: in te l 28F016XS 16-MBIT 1-MBIT x 16, 2-MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective 0-W ait-State Perform ance up to 33 MHz l Backward Compatible with 28F016SA/SV, 28F008SA Command-Set Sm artVoltage Technology — User-Selectable 3.3V or 5V V qc — User-Selectable 5V or 12V Vpp

Contextual Info: FAST CMOS BUFFER/CLOCK DRIVER IDT49FCT805/A IDT49FCT806/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • • • • • The IDT49FCT805/A and IDT49FCT806/A are clock drivers built using advanced dual metal CMOS technology.

Contextual Info: FAST CMOS BUFFER/CLOCK DRIVER IDT49FCT805/A IDT49FCT806/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • 0.5 M ICRO N CM O S Technology Guaranteed low skew < 700ps max. Low duty cycle distortion < 1 ns (max.) • Low CM O S power levels

HC4049A

Abstract: 4049A TC74HC4050A 4049B
Contextual Info: TC74HC4049AP/AF/AFIM TC74HC4050AP/AF/AFIM TC74HC4049 AP/ AF/AFN TC74HC4050AP/AF/AFN HEX BUFFER CO N V E R TE R IN V E R T IN G HEX BUFFER CON VERTER The TC74HC4049A an d TC74HC4050A a re high speed CMOS H EX B U FFE R S fa b ric a ted w ith silicon gate

HC367

Contextual Info: [ /Title CD74 HC367 , CD74 HCT36 7, CD74 HC368 , CD74 HCT36 8 /Subject (High Speed CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368 Data sheet acquired from Harris Semiconductor SCHS181B November 1997 - Revised April 2002 High Speed CMOS Logic Hex Buffer/Line Driver,

Contextual Info: fg] Se m c I High-Speed 3.3 V CMOS 32-Bit Buffer/Line Driver uctorJ nc. w ith qs74lcx4xh244 B u s H o ld FEATURES/BENEFITS DESCRIPTION • 32-bit function compatible to QS74LCX244 • Bus hold feature holds last active state during 3-state operation • 5V tolerant inputs and outputs

Contextual Info: FAST CMOS 16-BIT BUFFER/LINE DRIVER Integrated Device Technology, Inc. IDT54/74FCT16244T/AT/CT/ET IDT54/74FCT162244T/AT/CT/ET IDT54/74FCT166244T/AT/CT IDT54/74FCT162H244T/AT/CT/ET ADVANCE INFORMATION FEATURES: DESCRIPTION: • Common features: - 0.5 MICRON CMOS Technology

Contextual Info: 3.3V CMOS HEX INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS, 5 VOLTTOLERANT I/O DESCRIPTION: FEATURES: - IDT74LVC06A ADVANCE INFORMATION 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and

Contextual Info: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 4 B ,H Y 5 1 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4-bit configuration w ith Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

SRAM 10ns

Abstract: IC 7444 74FCT245 FCT245 ML65245 ML65245CK ML65L245 R4000
Contextual Info: August 1996 ML65245*/ML65L245* High Speed Octal Buffer Transceivers GENERAL DESCRIPTION FEATURES The ML65245 and ML65L245 are non-inverting octal transceivers. The high operating frequency 50MHz driving a 50pF load and low propagation delay (ML65245 – 1.7ns, ML65L245 – 2ns) make them ideal for very high

Contextual Info: •HYUNDAI HYM536A814A M-Series 8M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A814A is a 8M x 36-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 |xF decoupling capacitors are mounted

Contextual Info: FAST CMOS OCTAL BUFFER/LINE DRIVERS IDT54/74FCT240T/AT/CT/DT - 2240T/AT/CT IDT54/74FCT244T/AT/CT/DT - 2244T/AT/CT IDT54/74FCT540T/AT/CT IDT54/74FCT541/2541T/AT/CT FEATURES: DESCRIPTION: • Common features: The ID T octal buffer/line drivers are built using an advanced

20-PIN

Abstract: PI74LPT241
Contextual Info: PI74LPT241 3.3V 8-BIT BUFFER/LINE DRIVER PI74LPT241

Contextual Info: 3.3V CMOS HEX BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS AND 5 VOLT TOLERANT I/O D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1,27mm pitch SOIC, 0.65mm pitch SSOP and

Contextual Info: FAST CMOS 16-BIT BUFFER/LINE DRIVER IDT54/74FCT16240T/AT/CT IDT54/74FCT162240T/AT/CT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Common features: The ID T 5 4 /7 4 F C T 16 2 4 0 T /A T /C T and ID T54/ 74FCT162240T/AT/CT 16-bit buffer/line drivers are built