HIGH SENSITIVITY PHOTOTRANSISTOR Search Results
HIGH SENSITIVITY PHOTOTRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
HIGH SENSITIVITY PHOTOTRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SMALL TYPE PHOTOTRANSISTOR PH110 FEATURES_ DESCRIPTION_ • HIGH SENSITIVITY lc = 400 |iA TYP, H = 50 |xW/cm2 • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP The PH110 is a small type high sensitivity phototransistor |
OCR Scan |
PH110 PH110 SE310 b427S2S 00bS3G2 b427525 00bS303 | |
PH108AContextual Info: SMALL TYPE SILICON PHOTOTRANSISTOR PH108A FEATURES DESCRIPTION • SMALL PACKAGE 4.0 x 2.8 x 2.5 mm • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP • HIGH SENSITIVITY II = 0.6 mA TYP @ V c e = 5 V, H = 0.5 mW/cm2 The PH108A is a small type high sensitivity phototransistor |
OCR Scan |
PH108A PH108A SE308 b427525 DDb5300 | |
high sensitivity phototransistor
Abstract: KPCB0001EA S4404-01 SE-171
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S4404-01 S4404-01 SE-171 KPTR1002E01 high sensitivity phototransistor KPCB0001EA | |
high sensitivity phototransistor
Abstract: IR Emitters PT126
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PT126C high sensitivity phototransistor IR Emitters PT126 | |
Contextual Info: NEW PRODUCT Phototransistor KDT2001 Description - The KDT2001 is a high-sensitivity NPN silicon phototransistor. - Visible ray cut-off mold type : Spectral sensitivity : λ=700~1050nm : Peak sensitivity wavelength : λP=860nm - High reliability, Low power dissipation and Long life span. |
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KDT2001 KDT2001 1050nm 860nm | |
mouse Phototransistor
Abstract: phototransistor method time transistor 6c DPT-092-120 rise time of phototransistor DPT-092
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DPT-092-120 PT928-6C/F1 PT928-6C/F1 555mW/c mouse Phototransistor phototransistor method time transistor 6c DPT-092-120 rise time of phototransistor DPT-092 | |
Contextual Info: Phototransistors PNZ0111 Silicon NPN Phototransistor Unit : mm ø5.08±0.15 4.8 max. For optical control systems Features High sensitivity 16.0±1.0 2.67±0.15 Wide spectral sensitivity Base pin for easy circuit design Wide directional sensitivity : θ = 80 deg. typ. |
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PNZ0111 | |
KPCB0001EA
Abstract: S2829 SE-171
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S2829 S2829 SE-171 KPTR1001E02 KPCB0001EA | |
VISIBLE LIGHT PHOTOTRANSISTOR
Abstract: phototransistor visible light visible phototransistor high sensitivity phototransistor Phototransistor light detector Optical Receiver optical sensor VISIBLE LIGHT phototransistor datasheet the sensitivity of Optical Sensor
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RPM-20PB RPM-20PB VISIBLE LIGHT PHOTOTRANSISTOR phototransistor visible light visible phototransistor high sensitivity phototransistor Phototransistor light detector Optical Receiver optical sensor VISIBLE LIGHT phototransistor datasheet the sensitivity of Optical Sensor | |
phototransistor 600 nm
Abstract: phototransistor visible light high sensitivity phototransistor KPCB0001EA S4404-01 SE-171
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S4404-01 S4404-01 SE-171 KPTR1002E02 phototransistor 600 nm phototransistor visible light high sensitivity phototransistor KPCB0001EA | |
phototransistor 500-600 nm
Abstract: phototransistor 600 nm S2829 KPCB0001EA SE-171
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S2829 S2829 SE-171 KPTR1001E02 phototransistor 500-600 nm phototransistor 600 nm KPCB0001EA | |
Contextual Info: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package |
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S4404-01 S4404-01 SE-171 KPTR1002E02 | |
Contextual Info: Phototransistor S4404-18 High sensitivity phototransistor S4404-18 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package |
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S4404-18 S4404-18 SE-171 KPTR1005E01 | |
RPM-20PBContextual Info: Sensors Phototransistor, side view type RPM-20PB The RPM-20PB is a phototransistor in a side-facing package. High sensitivity with φ1.85 lens. FApplications Optical control equipment Receiver for sensors FExternal dimensions Unit: mm FFeatures 1) High sensitivity. |
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RPM-20PB RPM-20PB | |
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Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW17N 2002/95/EC 2002/96/EC BPW17N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW16N 2002/95/EC 2002/96/EC BPW16N 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW17N 2002/95/EC 2002/96/EC BPW17N 11-Mar-11 | |
Contextual Info: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW16N 2002/95/EC 2002/96/EC BPW16N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
PN168
Abstract: PNA1801L
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PNA1801L PN168) PN168 PNA1801L | |
Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW17N 2002/95/EC 2002/96/EC BPW17N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
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BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g | |
Contextual Info: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW76A, BPW76B 2002/95/EC 2002/96/EC BPW76 11-Mar-11 | |
Contextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 | |
VBPW77NB
Abstract: BPW77NA BPW77NB npn phototransistor APPLICATION NOTE BpW77 BPW77 phototransistor 600 nm Silicon NPN Phototransistor
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BPW77NA, BPW77NB BPW77 2002/95/EC 2002/96/EC 18-Jul-08 VBPW77NB BPW77NA BPW77NB npn phototransistor APPLICATION NOTE BpW77 phototransistor 600 nm Silicon NPN Phototransistor |