HIGH POWER TRANSISTOR Search Results

APT13003Z-E1

Abstract: transistor 2808 APT13003 bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.

MJW18020G

Abstract: MJW18020 TO-247 NPN SILICON POWER TRANSISTORS
Contextual Info: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

GSM repeater circuit using transistor

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

transistor sp 772

Contextual Info: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz

BUV21

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

BUV60

Abstract: BUV20
Contextual Info: ON Semiconductort BUV20 BUV60 SWITCHMODEt Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS • High DC current gain: • • hFE min = 20 at IC = 25 A

BUV23

Abstract: motorola transistor 0063
Contextual Info: MOTOROLA Order this document by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.

High Current Switching Applications transistor

Abstract: 2SC2656 circuit power convertor dc to dc switching
Contextual Info: 2SC2656 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers

cfl low loss drive

Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
Contextual Info: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer

2SC3223

Contextual Info: SavantIC Semiconductor Product Specification 2SC3223 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High speed,high current ·Low saturation voltage APPLICATIONS ·For high current high speed,high power applications PINNING See Fig.2 PIN

Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with

Contextual Info: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating

Contextual Info: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN

2SA1041

Abstract: LE15A
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1041 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High transition frequency • Excellent safe operating area APPLICATIONS • Power switching applications • High frequency power amplifier

2SA1044

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1044 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • High transition frequency • Excellent safe operating area APPLICATIONS • Power switching applications • High frequency power amplifier

2SC2751

Contextual Info: SavantIC Semiconductor Product Specification 2SC2751 Silicon NPN Power Transistors DESCRIPTION •With TO-3N package ·High voltage ,high speed · APPLICATIONS ·For use in high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1

BUF405A

Abstract: BUF405AFI lb 385 IC circuit diagram
Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BUF405A BUF405AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . . . . . . HIGH SWITCHING SPEED NPN POWER TRANSISTORS EASY TO DRIVE HIGH VOLTAGE FOR OFF-LINE APPLICATIONS 100 KHz SWITCHING SPEED LOW COST DRIVE CIRCUITS

2SC5125

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,

BULD39D

Abstract: BULD39D-1 BULD39DT4 JESD97
Contextual Info: BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features • NPN transistor ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ Surface-mounting DPAK TO-252 power

MTM4N45

Abstract: fet irf830 MTP4N45 IRF830
Contextual Info: IRF830 Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com

Gan hemt transistor RFMD

Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Contextual Info: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron