HIGH POWER TRANSISTOR Search Results

2N5631

Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Contextual Info: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com

2SD1073

Contextual Info: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers

colour tv power supply ic

Abstract: transistor 2sc2944
Contextual Info: 2SC2944 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching Low saturation voltage High reliability Applications Colour & B/W TV power supply Active power filter Industrial use power supply series regulator

Contextual Info: FJP13007 High Voltage Fast-Switching NPN Power Transistor High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings

2SD1313

Contextual Info: Æ àM O SPE C HIGH-VOLTAGE HIGH POWER TRANSISTORS NPN 2SD1313 . designsd for use in high power amplifier,and switching applcation. FEATURES: * High Power Dissipation PD= 200W TC= 25°C * High Collector Current- lc= 25A(DC) * High Speed Switching - 1 ,=0.5 us(Typ) @ lc= 15A

APT13003Z-E1

Abstract: transistor 2808 APT13003 bcd
Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.

EU13003E

Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power.

13003e

Abstract: EU13003E APT13003EZTR-G1 APT13003EZ-E1 APT13003 APT13003E TO126 package
Contextual Info: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power. •

2sd1071 transistor

Abstract: 2SD1071 2sd1071 equivalent high dc current gain transistor
Contextual Info: 2SD1071 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER Outline Drawings Features TO-220AB High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers

RF565-2

Abstract: 440 transistors
Contextual Info: RFMD. High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high-power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high-power density

13003e

Abstract: APT13003EZTR-G1 eu13003E APT13003 APT13003E APT13003EZ-E1 High voltage fast switching power transistor to92 EU1300
Contextual Info: Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power. •

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON

Contextual Info: 2SD1072 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE , SWITCHING Outline Drawings Features TO-220AB High D.C. current gain High reliability Applications Switching regulators DC-DC converter Solid state relay General purpose power amplifiers

Contextual Info: MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and

2sc3030

Abstract: TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH HIGH CURRENT HIGH SPEED SWITCHING TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED
Contextual Info: 2SC3030 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Uitrasonic generators High frequency inverters

2SA877

Abstract: 2SA878
Contextual Info: AOK AOK Semiconductor Product Specification 2SA877 2SA878 S ilicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage

RF565-2

Contextual Info: RFMD . High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high power density

BUV22G

Abstract: BUV22
Contextual Info: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:

BUV21

Abstract: BUV21G
Contextual Info: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

2SD1128

Contextual Info: 2SD1128 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON INDUSTRIAL USE POWER SUPPLY Outline Drawings TO-220AB Features High D.C. current gain Excellent linearity in hFE Excellent safe operating area High reliability Applications Color & B/W TV power supply

WP-22

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

Contextual Info: Power Transistor RT550PD Product Features Application • High Output Power P1dB = 40dBm typ @2.3GHz • High Efficiency • High Power Gain G1dB = 10dB(typ) @2.3GHz • High Linearity • Hermetically sealed package • Competitive Price • • • • •

Contextual Info: Power Transistor RT550PD Product Features Application • High Output Power P1dB = 40dBm typ @2.3GHz • High Efficiency • High Power Gain G1dB = 10dB(typ) @2.3GHz • High Linearity • Hermetically sealed package • Competitive Price • • • • •