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    HIGH POWER SILICON DIODE Search Results

    HIGH POWER SILICON DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC331AD7LQ103KX18D
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC331CD7LP683KX19L
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC332QD7LP104KX18L
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC355DD7LP684KX18L
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GR331AD7LP333KW01D
    		Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose PDF

    HIGH POWER SILICON DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    selenium rectifier bridge

    Abstract: high voltage high current bridge rectifier movs full wave rectifier diodes high voltage bridge rectifier selenium high voltage diodes cke scr
    Contextual Info: HIGH POWER, HIGH VOLTAGE HIGH POWER, LOW VOLTAGE We Have You Covered! STANDARD & CUSTOM SEMICONDUCTOR ASSEMBLIES HIGH VOLTAGE SILICON RECTIFIERS • High Current/ High Voltage Silicon Rectifiers ■ MOVs ■ Selenium ■ Assemblies ■ High Voltage Diodes


    Original     		PDF

    dh200

    Abstract: DH294 Dh252 DH270 f60D
    Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.


    Original     		DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 S268-W1 f60D PDF

    DH292

    Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.


    Original     		DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 M208b DH292 PDF

    DH294

    Abstract: DH200 DH270 DH256 Dh252 varactor multiplier dh110 DH292 DH293 M208B
    Contextual Info: POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors from 0.2 to 25 GHz are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders.


    Original     		DH294 DH200 DH270 DH110 DH293 DH252 DH256 DH292 DH267 M208b varactor multiplier PDF

    E13005D-213

    Abstract: E13005D
    Contextual Info: E13005D-213 Pb Free Plating Product Pb E13005D-213 MJE Power Transistor with Damping Diode MJE13005 series Product specification Silicon NPN Power Transistor DESCRIPTION Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power


    Original     		E13005D-213 MJE13005 E13005D-213 E13005D PDF

    2N6079

    Contextual Info: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics


    Original     		2N6079 2N6079 com/2n6079 PDF

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original     		2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100 PDF

    DH80210

    Abstract: DH80154 BH200 DH80189 DH80120 EH80204 EH80083 EH80182 BH301 DH80209
    Contextual Info: SILICON PIN DIODES High voltage PIN diodes Silicon PIN diodes for switching & phase shifting applications medium & high power Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction


    Original     		BH300 BH300 BH200 BH200 DH80210 DH80154 DH80189 DH80120 EH80204 EH80083 EH80182 BH301 DH80209 PDF

    EH80083

    Abstract: EH80204 DH80154
    Contextual Info: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction


    Original     		BH141 BH141 BH301 BH300 BH300 BH202N EH80083 EH80204 DH80154 PDF

    DH80154

    Abstract: DH80080
    Contextual Info: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction


    Original     		conditi27d BH141 BH141 BH301 BH300 BH300 DH80154 DH80080 PDF

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


    Original     		BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100 PDF

    MJ2955 replacement

    Abstract: diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 free transistor equivalent book 2sc789 BU108 motorola diode cross reference MJE-3439 tip122 pin configuration 2SA756 BU104P PDF

    BUT34 equivalent

    Abstract: BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high–voltage, high–speed, power


    Original     		BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent 2N3055 BU108 2SA1046 BUV22 equivalent TIP34C equivalent bc 574 transistor BU326 BU100 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


    Original     		BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100 PDF

    2N4922

    Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A


    Original     		BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482 PDF

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


    Original     		BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 PDF

    TIP34C equivalent

    Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A


    Original     		BUV11 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP34C equivalent BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100 PDF

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
    Contextual Info: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output


    Original     		RJS6005TDPP; 0212/100/in-house/LAH/JE SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0 PDF

    GC4412

    Contextual Info: Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		GC4400 MIL-S-19500. GC4500, GC4200, GC4300 GC4412 PDF

    GC4430

    Abstract: High Speed Switches GC4432-30 Types of Radar Antenna GC4400 GC4413 GC4410 GC4411 GC4412 GC4431
    Contextual Info: Semiconductor Control Devices HIGH VOLTAGE PIN DIODES APPLICATIONS DESCRIPTION The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by


    Original     		GC4400 MIL-S-19500. GC4500, GC4200, GC4300 GC4430 High Speed Switches GC4432-30 Types of Radar Antenna GC4413 GC4410 GC4411 GC4412 GC4431 PDF

    MPN7420

    Abstract: MPN7360
    Contextual Info: High Power PIN Diodes Description Features These Metelics high power silicon mesa PIN chips are glass passivated for high voltage, high power applications demanding good reliability and resistance to moisture. • • • High Voltage Breakdown to 800 Volts


    Original     		MIL-PRF-19500 MPN7453A MPN7453B MPN7453C MPN7420 MPN7330 MPN7360 MPN7370 MPN7380 A17002 PDF

    tektronix 475

    Abstract: motorola bipolar transistor
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT33 Designer’s Data Sheet 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT33 Darlington transistor is designed for high-voltage, high-speed, power


    OCR Scan     		BUT33 BUT33 tektronix 475 motorola bipolar transistor PDF

    but34

    Abstract: Motorola Bipolar Power Transistor Data darling
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Designer's Data Sheet 50 AMPERES NPN SILICON POWER DARLINQTON TRANSISTOR 850 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT34 Darlington transistor Is designed for high-voltage, high-speed, power


    OCR Scan     		BUT34 BUT34 Motorola Bipolar Power Transistor Data darling PDF

    400V switching transistor

    Abstract: npn darlington 400v 15a NPN Transistor 10A 400V NTE2315 Displays
    Contextual Info: NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast


    Original     		NTE2315 NTE2315 400VC 500mA, 400V switching transistor npn darlington 400v 15a NPN Transistor 10A 400V Displays PDF