HIGH POWER MOSFET TRANSISTORS NAME Search Results

led driver mosfet SOT23 6pin

Abstract: MTD6N15 Q100 SDE06A
Contextual Info: SM74101 Tiny 7A MOSFET Gate Driver General Description Features The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package SOT23 equivalent footprint , with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that

Contextual Info: MIC2507 Quad Integrated High-Side Switch Preliminary Information General Description Features The MIC2507 is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output pass transistors each with a dedicated TTL compatible input

MIC2507

Abstract: MIC2507BM CTL-24
Contextual Info: MIC2507 Micrel MIC2507 Quad Integrated High-Side Switch Preliminary Information General Description Features The MIC2507 is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output pass transistors each with a dedicated TTL compatible input

2507

Contextual Info: M IC 2507 MIC2507 Quad Integrated High-Side Switch Preliminary Information General Description Features The MIC2507 is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output pass transistors each with a dedicated TTL compatible input

Contextual Info: SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION FEATURES The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to

CRCW06031132F

Abstract: MSOP-10
Contextual Info: SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION FEATURES The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to

Contextual Info: SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION FEATURES The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to

Contextual Info: SiP12101 Vishay Siliconix High Performance Step-Down DC-DC Converter With Adjustable Output Voltage DESCRIPTION FEATURES The SiP12101 is a high efficiency 600 mA step down converter with internal low on resistance power MOSFET switch and synchronous rectifier transistors. It is designed to

ADC 808

Abstract: MOTOROLA 934 MRF182 MRF182R1 MRF182SR1
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182R1 MRF182SR1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device

mrf182

Abstract: MRF182R1 MRF182SR1 945 mosfet NI-360
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182R1 MRF182SR1 N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device

MIC2507

Abstract: MIC2507BM
Contextual Info: MIC2507 Micrel MIC2507 Quad Integrated High-Side Switch Not Recommended for New Designs General Description Features The MIC2507 is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output pass transistors each with a dedicated TTL compatible input

rf push pull mosfet power amplifier

Abstract: class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of

Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

MRF184

Abstract: MRF184R1 MRF184SR1
Contextual Info: MOTOROLA The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Chip-Rail

Abstract: power bjt sw 13003 transistor EN 13003 13003 MOSFET transistor EN 13003 A 13003 TO-92 sw 13003 MOSFET act30 application "Power bjt
Contextual Info: Page No. : 1/7 RS2030X Lowest Cost Green-Power Off-Line PWM Controller Description The RS2030 is a high performance green-power offline power supply PWM controller. It features a scalable driver for driving external NPN 13003 or MOSFET transistors for line voltage switching. This proprietary architecture enables many advanced

Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

SPS 16-H

Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer
Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

u1 voltage regulator

Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

WB1 SOT23

Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3 sps 953 transistor data
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

MAX858ESA

Contextual Info: 19-0211; Rev 0: 3/94 A M X IÆ 3 .3 V /5 V or Adjustable-O utput, Step-Up DC-DC C onverters The MAX856-MAX859 combine ultra-low quiescent supply current and high efficiency to give maximum battery life. MOSFET power transistors permit high switching frequen­

capacitor 0805 avx

Abstract: Motorola Base Station motorola transistor 912 MOTOROLA ELECTROLYTIC CAPACITOR Motorola Potentiometer TLX8-0300 wb1 sot package sot-23 MRF9080 MRF9080LSR3 MRF9080R3
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

resistor 0805

Abstract: J338
Contextual Info: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

rf push pull mosfet power amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of