HIGH POWER DIODE AXIAL Search Results

HE12FA

Abstract: diode k7
Contextual Info: HE12FA.HE12FD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode High efficiency fast silicon rectifier diode HE12FA.HE12FD Forward Current: 12 A

high power diode 500v

Abstract: HUM2001 HUM2005 HUM2010 HUM2015 HUM2020 high power pin diode
Contextual Info: HUM2001/HUM2020 SERIES Pin Diode High Power Stud KEY FEATURES With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical.

HUM2001

Abstract: HUM2005 HUM2010 HUM2015 HUM2020
Contextual Info: HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical.

HUM2001

Abstract: HUM2005 HUM2010 HUM2015 HUM2020
Contextual Info: HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY KEY FEATURES With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical.

Contextual Info: BV 4, BV 6 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter -2 Axial lead diode High voltage silicon rectifier diodes BV 4, BV 6 Forward Current: 0,1 A

Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

IN5225

Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

1N4154

Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

Reel Taping Specification JEDEC

Abstract: XB15A402 XB15A105 XB15A204 XB15A301 v629
Contextual Info: PIN DIODE • Applications ◆ Small Insertion Loss ◆ High Isolation ◆ High Power Handling ● High Power Antenna Switch 25W output two-way radio ■ General Description ■ Dimensions MAX 5.0 The XB15A402 PIN diode employs a high reliability glass package that is designed for solid state antenna switches used in

j6 diode

Abstract: bridge rectifier j6
Contextual Info: BV 8, BV 12, BV 16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,3 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A

1M5378B

Contextual Info: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C

bridge rectifier j7

Contextual Info: HE6SF200 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter .3 9  :  4  :  : , >?15 Axial lead diode High efficiency super fast

Contextual Info: Philips Semiconductors Power Diodes POWER DIODE CHARACTERISTICS Back diffused rectifier diodes A single-diffused P-N diode with a two layer structure cannot combine a high forward current density with a high reverse blocking voltage. A way out of this dilemma is provided by the three layer

12 volt zener diode

Abstract: automotive sld zener diode zener diode automotive
Contextual Info: Part: 3xSLD10U Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

Contextual Info: Part: 3xSLD10U Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

c1449

Abstract: LCD 2002a C1449 transistor
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 590 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (590 nm, High Optical Power) F 2002A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch

C1446

Abstract: osram topled DIODE 630
Contextual Info: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch

12 volt zener diode

Abstract: SLD10U-018 automotive zener diode sld10u
Contextual Info: Part: SLD10U-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

automotive zener diode

Abstract: SLD24-018
Contextual Info: Part: SLD24-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

Contextual Info: Part: SLD10U-017 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

automotive sld zener diode

Contextual Info: Part: SLD10-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

automotive sld zener diode

Contextual Info: Part: SLD16-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

Contextual Info: 2SB154040ML 2SB154040ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB154040ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching

Contextual Info: 2SB154060ML 2SB154060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB154060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching