HIGH POWER PIN DIODE Search Results

SMP1302-085LF

Abstract: S1629 S1632 s1628
Contextual Info: DATA SHEET • SMP1302-085LF DIODE DATA SHEET SMP1302-085LF: Surface Mount PIN Diode for High Power Switch Applications Applications Anode Pin 3 Anode (Pin 1) x Low loss, high power switches x Low distortion attenuators Features Cathode (Pin 2, Exposed Paddle)

Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

GC4600

Abstract: high power pin diode High Power PIN Diodes IR STUD diodes
Contextual Info: GC4600 – GC4605 CONTROL DEVICES High Power PIN Diodes TM RoHS Compliant KEY FEATURES The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus

HUM2010

Abstract: HUM2015 HUM2020
Contextual Info: HUM2010/HUM2015/HUM2020 PIN DIODE HIGH POWER STUD W ATE R TOW N DIVISI ON DESCRIPTION KEY FEATURES With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical.

bh 26 00

Abstract: DH80102 BH-2003 BH301 80204 89129 R/BH-202
Contextual Info: SILICON PIN AND NIP DIODES FOR SWITCHING AND PHASE SHIFTING APPLICATIONS MEDIUM AND HIGH POWER This series of high power, high voltage PIN and NIP diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, In terms of breakdown voltages, junction

GC4430

Abstract: digital phase shifters GC4410 GC4412 GC4432-30 gc4495 GC4400 GC4411 GC4413 GC4200
Contextual Info: GC4410 – GC4495 TM CONTROL DEVICES – HIGH VOLTAGE PIN DIODES RoHS Compliant DESCRIPTION KEY FEATURES The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability

SLD302V

Abstract: SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-24 SLD302V-25 SLD302V-3
Contextual Info: SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Pin Configuration

Alpha Industries pin diodes

Abstract: 502001
Contextual Info: Control Diodes Low Thermal Resistance, High Power Double Slug PIN Diodes This series of PIN diodes features passivated PIN chips compression bonded between two Tungsten slugs for improved heat transfer. The assembly is sealed with a sleeve of high temperature glass for

Contextual Info: MBR40045CTS Silicon Power Schottky Diode VRRM IF Features = = 45 V 400 A Package • High Surge Capability Pin 2 Pin 4 Pin 1 Pin 3 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 2 Pin 4 Pin 1 Pin 3 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

MMP7068

Abstract: MMP7023 MMP7033 MMP7064 MMP7020 MMP7024 MMP7049 MMP7032 MMP7034 MMP7036
Contextual Info: Control Devices Control Devices: MMP 7000 Series Low - High Power PIN Diodes Description The MicroMetrics MMP 7000 series PIN diodes are manufactured using very high resistivity silicon epitaxial material grown on a highly doped low resistivity substrate. Combined with a

89051

Abstract: DH80102 89189 DH80052 89186
Contextual Info: HIGH-VOLTAGE PIN AND NIP DIODES e - This series of high power, high voltage PIN and NIP diodes Incorporates passivated mesa technology. A broad range Is available, in terms of breakdown voltages, junction capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.

a15 diode

Abstract: MPN7302 diode a15 MPN-7370 in5767 MPN-7330 MPN-7442
Contextual Info: =metelics PIN DIODE CHIPS FOR SWITCH & ATTENUATOR APPLICATIONS Metelics provides a wide selection of PIN diodes in chip and packaged configurations for both RF and microwave requirements. The products are available from very low capacitance high speed switch devices to long lifetime high power switch

bh 10 g

Abstract: 80156 dh80102 DH80189 89308
Contextual Info: T E K E LE C C O M P O N E N T S bflE D \ f| • ^QD3767 G D G D 5 2 3 37T ■ . HIGH-VOLTAGE PIN AND NIP DIODES ■ - SILICON PIN SWITCHING AND PHASE SHIFTING DIODES MEDIUM AND HIGH POWER

34036

Abstract: ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 HUM2010 HUM2015 HUM2020 Features • • • • • • PIN DIODE HIGH POWER STUD High Power Stud Mount Package High Zero Bias Impedance Very Low Inductance and Capacitance No Internal Lead Straps

High Power PIN Diodes

Abstract: UM4000 UM4902 UM4906 UM4001 UM4002 UM4006 UM4010 UM4900 UM4901
Contextual Info: UM4000 / UM4900 HIGH POWER PIN DIODES KEY FEATURES DESCRIPTION Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage. Both series have been fully qualified in high power UHF phase shifters and megawatt peakpower duplexers, accumulating thousands of

PM45150K

Abstract: PM50150K
Contextual Info: PM45150K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PM4575J

Abstract: PM5075J
Contextual Info: PM4575J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

0417C

Abstract: PM4575J PM5075J G11295
Contextual Info: PM5075J Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PM45100K

Abstract: PM50100K
Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Memory

Abstract: FT61024
Contextual Info: FT61024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES Advanced CMOS Technology Fast tOE Automatic Power Down Packages —32-Pin 300 mil DIP and SOJ —32-Pin 400 mil SOJ —32-Pin 600 mil Ceramic DIP —32-Pin 400 mil Ceramic DIP —32-Pin Solder Seal Flatpack

MI407

Contextual Info: bSMSÔSS DD17741 b TE • ANTENNA SWITCH M I407 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI407 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.

UM7006

Abstract: UM7000 UM7001 UM7100 UM7101 UM7200 UM7201 UMX7000 UMX7202B UM70
Contextual Info: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available KEY FEATURES The UM7000 and UM7100 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series offers the lowest series resistance, but the