HIGH POWER AMPLIFIER Search Results

Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5

SST12CP11

Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the

Contextual Info: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire

2N5631

Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Contextual Info: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com

Contextual Info: RF3163 and RF3164 3x3mm CDMA Power Amplifier Modules RF Micro Devices High-power, High-efficiency Linear Power Amplifier Modules for CDMA Applications The RF3163 and RF3164 are high-power, high-efficiency linear power amplifier modules specifically designed for 3V

Contextual Info: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB

16-vqfn-3x3-QVC-2

Abstract: SST12LP15B microchip at 2.45 GHz gp1215
Contextual Info: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB

2SD1073

Contextual Info: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers

JEP95

Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Preliminary Specifications SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

JEP95

Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Preliminary Specifications SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

2SD1313

Contextual Info: 2SD1313 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in tnm HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATURES : . High Power Dissipation . High Collector Current . High Speed Switching Low Saturation Voltage

SST12LP14A

Abstract: SST12LP14A-QVCE JEP95 SST12LP14A-QVCE-K S7130 S71300-02-000
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

SST12LP15A

Abstract: JEP95 SST12LP15A-QVCE SST12LP15A-QVCE-K
Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

JEP95

Abstract: SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

2.45 GHz single chip transmitter

Abstract: JEP95 SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K S71353
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:

S71291

Abstract: SST12LP15A JEP95 SST12LP15A-QVCE SST12LP15A-QVCE-K SST-GP1215A2 16-vqfn-3x3-QVC-2 1291
Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

SST12LP15A

Abstract: JEP95 SST12LP15A-QVCE SST12LP15A-QVCE-K
Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:

SST12LP15

Abstract: SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Contextual Info: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:

tdk LAMBDA supply Circuit diagram

Abstract: rectifier module circuit diagram 48vdc circuits 4h35 Nippon Chemi-Con LXV LAMBDA los 28v series Nemic-Lambda GmbH Nippon capacitors tdk lambda power supply
Contextual Info: PAH450S Series Compact and high-power DC/DC Power-module The new era for base station transmission amplifiers: Compact and high-power output PAH450S Series Compact and high-power DC/DC Power-module actual size PAH450S Series High efficiency: 92% - top level in the industry

sensor microwave

Abstract: high power microwave transmitter microwave sensor IEC-529 ipx5 ha6010
Contextual Info: HBH 14.0 – 16.0 GHz High Power Amplifier Microwave GmbH HA6010 General Description The HA6010 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :

Contextual Info: RF Micro Devices RF5198 and RF5184 High-Power, High-Efficiency Linear Power Amplifier Modules for WCDMA Applications The RF5198 and RF5184 from RF Micro Devices® RFMD® are high-power, high-efficiency linear power amplifier modules specifically designed for