HIGH IMPEDANCE MICROPHONE Search Results

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.

Contextual Info: TOSHIBA 2SK208 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK208 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS +0.5 2.5-0.3 + 0.25 1.5-0.15 • High Breakdown Voltage :V j d s = —50V • High Input Impedance

Contextual Info: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.

2SK879

Abstract: UFF 100 04
Contextual Info: TO SH IB A 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS 2.1 ± 0.1 J • High Breakdown Voltage : V jj g= —50V • High Input Impedance

Contextual Info: T O SH IB A 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2MAX. • • • High Breakdown Voltage High Input Impedance Low Noise

2SK118

Abstract: SK118
Contextual Info: TO SH IB A 2SK1 18 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 18 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 4.2 MAX. • High Breakdown Voltage VGDS = - 5 0 V • High Input Impedance

FET electret microphone

Abstract: TRANSDUCERS ELECTRET electret electret microphone 100mA Junction FET AMPLIFIER DIAGRAM ZN475E a microphone amplifier
Contextual Info: TELECOMMUNICATIONS CIRCUITS MICROPHONE AM PLIFIER FOR TELEPHONE CIRCU ITS ZN475E Some electret transducers are supplied with a built in impedance matching junction FET buffer to operate with a microphone amplifier of low input impedance. The ZN475E has been designed with a high input

2SK208

Contextual Info: 2SK208 SILICON N CHANNEL JUNCTION TYPE G E N E R A L PURPOSE AND IMPEDANCE CONVERTER Unit in mm AND CONDEN SER MICROPHONE A P P L I C A T I O N S . + 0 .5 2 .5 — 0 .3 FEATURES: + 0 .2 5 1.5 - Q . l 5 . High Breakdown Voltage : V q q s =-50V dc5 +! d • High Input Impedance : Içgg=-1.0nA Max.

WM-71

Abstract: WM-77 IEC-318 spring loaded terminal
Contextual Info: Microphone Cartridges Ceramic Receiver Cartridge Series: WM-77 • Features ● High SPL, high sound quality ceramic receiver spring terminal type ■ Specifications Output S.P.L. 107.5±2.5dB (Vin = 1 Vrms, 1kHz) Impedance 2.0 kΩ (1kHz) Capacitance 80nF (1kHz)

Contextual Info: STICK-ON SERIES Model STM-3 High Gain Mic Preamplifier ANYWHERE YOU NEED. •        High Gain Microphone Preamp Adjustable Output Levels High or Low Impedance Mic Inputs To Convert Line Inputs to Mic Inputs Two Balanced or Unbalanced Outputs

"Microphone Preamplifier" 1.5V

Abstract: electret mic "Microphone Preamplifier" 1.5V transistor electret condenser microphone preamplifier ecm cartridge electret microphone 20hz FET electret microphone ECM microphone condenser microphone ecm 30 condenser mic 1.5 v
Contextual Info: 19-2515; Rev 0; 7/02 Electret Condenser Microphone Cartridge Preamplifier Features ♦ Replaces FET in Electret Condenser Microphone ♦ 2.3V to 5.5V Single-Supply Operation ♦ Low-Impedance Output <0.4Ω ♦ High PSRR: 82dB ♦ Three High-Gain Options:

condenser microphone 20hz

Abstract: 2SK118
Contextual Info: TOSHIBA 2SK118 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE A N D IM PEDANCE CONVERTER A N D CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm

2SK87

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm G E N E R A L PURPOSE AND IM PEDANCE CONVERTER 2 . 1+ 0.1 AND CONDEN SER MICROPHONE A P P L I C A T I O N S . 1.2 5±0.1 • High Breakdown Voltage: • High Input Impedance: s VGDS 50V IG gg=-1.0nA Max.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3866 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

2SK208

Contextual Info: T O S H IB A 2SK208 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK208 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER U nit in mm MICROPHONE APPLICATIONS + 0.5 2.5-0.3 • + 0.25 1.5-0.15 High Breakdown Voltage :V GD g = —50V •

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

TRANSISTOR MARKING ue

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4083G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV

ecg semiconductors master replacement guide

Abstract: ECG transistor replacement guide book free ad620 strain gauge pressure sensor schematic weigh scale AD7730 SD-020-12-001 Linear inductosyn ad7730 pcb circuit example pcb ad7730 op amp 741 model PSpice Schaevitz e100
Contextual Info: PRACTICAL DESIGN TECHNIQUES FOR SENSOR SIGNAL CONDITIONING INTRODUCTION - 1 BRIDGE CIRCUITS - 2 AMPLIFIERS FOR SIGNAL CONDITIONING - 3 STRAIN, FORCE, PRESSURE, AND FLOW MEASUREMENTS - 4 HIGH IMPEDANCE SENSORS - 5 POSITION AND MOTION SENSORS - 6 TEMPERATURE SENSORS -

2SK3372

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For electret capacitor microphone • High mutual conductance gm