HIGH GAIN LOW NOISE 2N Search Results

IP1dB

Contextual Info: RFLA1018 RFLA1018Variable Gain Low Noise High Linearity Amplifier VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER Max Gain = 35dB min.  Noise Figure of 0.65dB Typical  Gain Control Range = 35dB  High IIP3 = 2dBm  Single +5V Supply Small 16-Pin, 8.0mm x 8.0mm,

X band attenuator 30db

Abstract: LA1018
Contextual Info: RFLA1018 RFLA1018Variable Gain Low Noise High Linearity Amplifier VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER Max Gain = 35dB min.  Noise Figure of 0.65dB Typical  Gain Control Range = 35dB  High IIP3 = 2dBm  Single +5V Supply Small 16-Pin, 8.0mm x 8.0mm,

2130a

Abstract: lg remote circuit diagram
Contextual Info: RFLA1018 RFLA1018Variable Gain Low Noise High Linearity Amplifier VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER GND 2 Internally Matched to 50 on All RF Ports SCN 3 GND 4 Bypass Mode of LNA for High Dynamic Range  Max Gain = 35dB  Noise Figure of 0.65dB Typical

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

0.01u capacitor

Contextual Info: NJG1152KA1 Wide Band Low Noise Amplifier GaAs MMIC • GENERAL DESCRIPTION The NJG1152KA1 is a fully matched wide band low noise amplifier GaAs MMIC for digital TV applications. To achieve wide dynamic range, the NJG1152KA1 offers high gain mode and low gain mode. Selecting high gain mode

NJG1146KG1

Contextual Info: NJG1146KG1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION The NJG1146KG1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range, the NJG1146KG1 offers high gain mode and low gain mode. Selecting high gain mode

Contextual Info: NJG1146KG1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION The NJG1146KG1 is a fully matched wide band low noise amplifier GaAs MMIC for digital TV applications. To achieve wide dynamic range, the NJG1146KG1 offers high gain mode and low gain mode. Selecting high gain mode

Contextual Info: RFLA1018 RFLA1018Variable Gain Low Noise High Linearity Amplifier VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER 2 Internally Matched to 50 on All RF Ports SCN 3 Analog Voltage Variable Attenuator with 3.3V Control Range GND 4  Max Gain = 35dB min.

Contextual Info: NJG1146KG1 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION The NJG1146KG1 is a fully matched wide band low noise amplifier GaAs MMIC for digital TV applications. To achieve wide dynamic range, the NJG1146KG1 offers high gain mode and low gain mode. Selecting high gain mode

Contextual Info: NJG1152KA1 Wide Band Low Noise Amplifier GaAs MMIC • GENERAL DESCRIPTION The NJG1152KA1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range, the NJG1152KA1 offers high gain mode and low gain mode. Selecting high gain mode

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

CD 1691 CB

Abstract: NEC 7924 NEC D 986 IC - 7434
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

OPA847

Abstract: product preview OPERATIONAL AMPLIFIER ON SOT23-6
Contextual Info: OPA847 OPA 847 SBOS251 – JULY 2002 FEATURES APPLICATIONS ● HIGH GAIN BANDWIDTH: 3.7GHz ● HIGH DYNAMIC RANGE ADC PREAMP ● LOW NOISE, WIDEBAND, TRANSIMPEDANCE AMPLIFIER ● WIDEBAND, HIGH GAIN AMPLIFIER ● LOW NOISE DIFFERENTIAL RECEIVER ● VDSL LINE RECEIVER

Contextual Info: 4/05 ACP12017 High Output Level. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N459

Abstract: ZN460 5022 amplifier ZN459 variable gain audio preamplifier Ultra low noise amplifier
Contextual Info: AMPLIFIERS ULTRA LOW NOISE WIDEBAND AMPLIFIER 2N459/C/CP The ZN459 is an ultra low noise amplifier with remarkable noise performance, very high gain bandwidth product 15GHz , and small package. This combination makes It exceptionally attractive for low noise

NJG1145UA2

Abstract: EPFFP6-A2 0019dB
Contextual Info: NJG1145UA2 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION The NJG1145UA2 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial and satellite applications. To achieve wide dynamic range, the NJG1145UA2 offers high gain mode and low gain mode. Selecting high gain mode for weak

NEC JAPAN

Abstract: NESG2021M16 NESG2021M16-T3
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD M16, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications

tvg for sonar

Abstract: AD6021 AD602 agc for sonar 00538 AD600 AD602JR r2r resistor ladder networks smd 2n3904 pre-amp application note audio agc preamp
Contextual Info: Dual, Low Noise, Wideband Variable Gain Amplifiers AD600/AD602 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS Ultrasound and sonar time-gain controls High performance audio and RF AGC systems Signal measurement GENERAL DESCRIPTION The AD600/AD6021 dual-channel, low noise, variable gain

OPA657 transimpedance amplifier

Abstract: OPA355 OPA627 OPA655 OPA656 OPA657 OPA657U THS4601
Contextual Info: OPA657 OPA 657 SBOS197 – DECEMBER 2001 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH GAIN BANDWIDTH PRODUCT: 1.6GHz The OPA657 combines a high gain bandwidth, low distor-tion, voltage-feedback op amp with a low voltage noise JFET-input

Contextual Info: 4/05 ACP12017 High Output Level. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: Dual, Low Noise, Wideband Variable Gain Amplifiers AD600/AD602 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS Ultrasound and sonar time-gain controls High performance audio and RF AGC systems Signal measurement GENERAL DESCRIPTION The AD600/AD6021 dual-channel, low noise, variable gain