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    HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Search Results

    HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC331AD7LQ103KX18D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC331CD7LP683KX19L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC332QD7LP104KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC355DD7LP684KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GR331AD7LP333KW01D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose PDF

    HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NEC 2581

    Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


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    2SC4954 2SC4954-T2 2SC4954-T1 NEC 2581 nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1 PDF

    NEC 2581

    Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


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    2SC4954 2SC4954-T1 NEC 2581 nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821 PDF

    2SC4958

    Abstract: nec 473
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance


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    2SC4958 2SC4958) 2SC4958 nec 473 PDF

    pulse 01940

    Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2


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    2SC4954 4954-T sh527 pulse 01940 NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460 PDF

    IC 811 0400 01

    Abstract: TRANSISTOR 2SC 950
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters , 1.25 ±0.1


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    2SC4958 4958-T2 Par370 IC 811 0400 01 TRANSISTOR 2SC 950 PDF

    NEC IC D 553 C

    Abstract: CB 548 transistor NEC D 553 C
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2 .8 ± 0.2 Cre = 0.4 pF TYP.


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    2SC4955 2SC4955-T1 2SC4955-T2 NEC IC D 553 C CB 548 transistor NEC D 553 C PDF

    nec 2571

    Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .


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    2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz PDF

    2SC5345

    Abstract: Transistor KST-9007-001
    Contextual Info: 2SC5345 Semiconductor NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz Typ. , [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain


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    2SC5345 550MHz C5345 KST-9007-001 2SC5345 Transistor KST-9007-001 PDF

    Contextual Info: TSDF2020W VISHAY Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • 1 Very low noise figure Very high power gain High transition frequency fT = 25 GHz Low feedback capacitance Emitter pins are thermal leads 4 2 3 16712


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    TSDF2020W OT-343R D-74025 02-May-02 PDF

    NTE161

    Contextual Info: NTE161 Silicon NPN Transistor VHF–UHF Amplifier, Mixer/Osc Features: D High Current Gain–Bandwidth Product: fT = 600MHz Min @ f = 100MHz D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


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    NTE161 600MHz 100MHz 100MHz, 140kHz 60MHz 200MHz 500MHz NTE161 PDF

    transistor marking pb 6 sot-23

    Abstract: BFS17A
    Contextual Info: Not for new design, this product will be obsoleted soon BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component


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    BFS17A BFS17AR BFS17AW 2002/95/EC 2002/96/EC OT323 OT-23 transistor marking pb 6 sot-23 PDF

    KSC2787

    Contextual Info: KSC2787 KSC2787 FM/AM RF AMP, MIX, CONV, OSC, IF • Collector-Emitter Voltage : VCEO=30V • High Current Gain Bandwidth Product : fT=300MHz TYP. • Low Output Capacitance : COB=2.0pF (TYP.) TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


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    KSC2787 300MHz O-92S KSC2787 PDF

    KSC2787

    Contextual Info: KSC2787 NPN EPITAXIAL SILICON TRANSISTOR FM/AM RF AMP, MIX, CONV, OSC, IF • Collector-Base Voltage VCEO=30V • High Current Gain Bandwidth Product fT=300MHz Typ • Low Collector Capacitance COB: 2.0PF (Typ) TO-92S ABSOLUTE MAXIMUM RATINGS (TA=25°°C)


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    KSC2787 300MHz O-92S KSC2787 PDF

    Contextual Info: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 .


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    2SC3123 PDF

    2SC3136

    Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    -2SC3136 SC-43 260MHz 2SC3136 SCN-5962AC0-C5) TTA25A200A 2SC3136 PDF

    MP4T3243

    Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
    Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers


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    MP4T3243 OT-23 MP4T324335 Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303 PDF

    sot23 1303

    Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
    Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers


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    MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335 PDF

    Contextual Info: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources


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    350MHz PDF

    MRF951

    Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz


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    MRF951 MRF545 MRF544 MRF951 PDF

    BFR96

    Contextual Info: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz typ @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T


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    BFR96 MRF5812, MRF559 MRF8372 MRF557 MRF557T BFR96 PDF

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


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    BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power PDF

    DRO lnb

    Abstract: mbb159 BFG424F SOT343F
    Contextual Info: BFG424F NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.


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    BFG424F OT343F MSC895 BFG424F DRO lnb mbb159 SOT343F PDF

    transistor BFR91

    Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
    Contextual Info: P hilips Sem iconductors Product specification 7= -3 / ' / 7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION £ SbE D 7110ö2ti 004.5704 T^O * P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use In RF amplifiers such as in aerial


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    BFR91 ON4186) BFQ23. 7110fi2Li BFR91/02 7110flEb D0457GA transistor BFR91 BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor PDF

    478 SOCKET PINOUT

    Abstract: 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays THAT300
    Contextual Info: T H AT Corporation Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES APPLICATIONS 4 Matched NPN Transistors 300 4 Matched PNP Transistors (320) 2 Matched NPNs and PNPs (340) 4 Matched NP6N - 4 Matched PNP (380) • Microphone Preamplifiers ·


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    THAT300 1613u 1232u 478 SOCKET PINOUT 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays PDF