HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Search Results
HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GC331AD7LQ103KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
| GC331CD7LP683KX19L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
| GC332QD7LP104KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
| GC355DD7LP684KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive | |||
| GR331AD7LP333KW01D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose |
HIGH GAIN LOW CAPACITANCE NPN TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NEC 2581
Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
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2SC4954 2SC4954-T2 2SC4954-T1 NEC 2581 nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1 | |
NEC 2581
Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
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2SC4954 2SC4954-T1 NEC 2581 nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821 | |
2SC4958
Abstract: nec 473
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2SC4958 2SC4958) 2SC4958 nec 473 | |
pulse 01940
Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
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OCR Scan |
2SC4954 4954-T sh527 pulse 01940 NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460 | |
IC 811 0400 01
Abstract: TRANSISTOR 2SC 950
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2SC4958 4958-T2 Par370 IC 811 0400 01 TRANSISTOR 2SC 950 | |
NEC IC D 553 C
Abstract: CB 548 transistor NEC D 553 C
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OCR Scan |
2SC4955 2SC4955-T1 2SC4955-T2 NEC IC D 553 C CB 548 transistor NEC D 553 C | |
nec 2571
Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
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2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz | |
2SC5345
Abstract: Transistor KST-9007-001
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2SC5345 550MHz C5345 KST-9007-001 2SC5345 Transistor KST-9007-001 | |
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Contextual Info: TSDF2020W VISHAY Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • 1 Very low noise figure Very high power gain High transition frequency fT = 25 GHz Low feedback capacitance Emitter pins are thermal leads 4 2 3 16712 |
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TSDF2020W OT-343R D-74025 02-May-02 | |
NTE161Contextual Info: NTE161 Silicon NPN Transistor VHF–UHF Amplifier, Mixer/Osc Features: D High Current Gain–Bandwidth Product: fT = 600MHz Min @ f = 100MHz D Low Output Capacitance: Cob = 1.7pF (Max) @ VCB = 10V Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V |
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NTE161 600MHz 100MHz 100MHz, 140kHz 60MHz 200MHz 500MHz NTE161 | |
transistor marking pb 6 sot-23
Abstract: BFS17A
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BFS17A BFS17AR BFS17AW 2002/95/EC 2002/96/EC OT323 OT-23 transistor marking pb 6 sot-23 | |
KSC2787Contextual Info: KSC2787 KSC2787 FM/AM RF AMP, MIX, CONV, OSC, IF • Collector-Emitter Voltage : VCEO=30V • High Current Gain Bandwidth Product : fT=300MHz TYP. • Low Output Capacitance : COB=2.0pF (TYP.) TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor |
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KSC2787 300MHz O-92S KSC2787 | |
KSC2787Contextual Info: KSC2787 NPN EPITAXIAL SILICON TRANSISTOR FM/AM RF AMP, MIX, CONV, OSC, IF • Collector-Base Voltage VCEO=30V • High Current Gain Bandwidth Product fT=300MHz Typ • Low Collector Capacitance COB: 2.0PF (Typ) TO-92S ABSOLUTE MAXIMUM RATINGS (TA=25°°C) |
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KSC2787 300MHz O-92S KSC2787 | |
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Contextual Info: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 . |
OCR Scan |
2SC3123 | |
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2SC3136Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage |
OCR Scan |
-2SC3136 SC-43 260MHz 2SC3136 SCN-5962AC0-C5) TTA25A200A 2SC3136 | |
MP4T3243
Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
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MP4T3243 OT-23 MP4T324335 Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303 | |
sot23 1303
Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
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MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335 | |
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Contextual Info: T H AT Corporation Low-Noise Matched Transistor Array Die THAT 380G FEATURES • · · · · · · APPLICATIONS 4 Matched NPN and 4 Matched PNP Monolithic Construction Low Noise - 0.75 nV Hz PNP - 0.8 nV Hz (NPN) · Microphone Preamplifiers · Current Sources |
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350MHz | |
MRF951Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz |
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MRF951 MRF545 MRF544 MRF951 | |
BFR96Contextual Info: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz typ @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T |
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BFR96 MRF5812, MRF559 MRF8372 MRF557 MRF557T BFR96 | |
BFU725F
Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
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BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power | |
DRO lnb
Abstract: mbb159 BFG424F SOT343F
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BFG424F OT343F MSC895 BFG424F DRO lnb mbb159 SOT343F | |
transistor BFR91
Abstract: BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor
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OCR Scan |
BFR91 ON4186) BFQ23. 7110fi2Li BFR91/02 7110flEb D0457GA transistor BFR91 BFR91 transistor BFR91 philips bfq23 BFQ23 BFR91 NPN 6 GHz Wideband Transistor | |
478 SOCKET PINOUT
Abstract: 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays THAT300
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THAT300 1613u 1232u 478 SOCKET PINOUT 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays | |