HIGH GAIN FET Search Results

70 GHz

Contextual Info: MwT-S7 18 GHz High Gain, Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 50 FEATURES 50 • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS

A773

Abstract: sk 1413 FET mwt-A770
Contextual Info: MwT - A7 18 GHz High Gain, Low Noise GaAs FET Microwave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS

EPB025A

Abstract: Low Noise High Gain
Contextual Info: EPB025A Low Noise High Gain Heterojunction Power FET FEATURES • • • • • 420 50 TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN,

Contextual Info: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO

Contextual Info: ANALOG DEVICES □ FEATURES High Output Current: 50mA @ ±10V Fast Settling to 0.1%: 130ns High Slew Rate: 330V/jls High Gain-Bandwidth Product: 300MHz High Unity Gain Bandwidth: 40MHz Low Offset Voltage ImV for AD380K, L, S Wideband, Fast-Settling FET-lnput Op Amp

LH0084

Abstract: LH0084C LH0084D R11-R13
Contextual Info: LH0084/LH0084C a National Semiconductor LH0084/LH0084C Digitally-Programmable-Gain Instrumentation Amplifier General Description The LH0084/LH0084C is a self-contained, high speed, high accuracy, digitally-programmable-gain instrumentation am­ plifier. It consists of paired FET-input variable-gain voltagefollower input stages followed by a differential-to-single­

RQA0009

Abstract: 17-33 0952
Contextual Info: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

Contextual Info: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

17-33 0952

Abstract: RQA0009 RQA0009SXTL-E R07DS0493EJ0200
Contextual Info: Preliminary Datasheet RQA0009SXAQS R07DS0493EJ0200 Previous: REJ03G1566-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

380JH

Abstract: D380K AD380
Contextual Info: ANALOG DEVICES □ FEATURES High Output Current: 50mA @ ± 10V Fast Settling to 0.1%: 130ns High Slew Rate: 330V/|is High Gain-Bandwidth Product: 300MHz High Unity Gain Bandwidth: 40MHz Low Offset Voltage ImV for AD380K, L, S Wideband, Fast-Settling FET-lnput Op Amp

ic 339

Abstract: RQA0014XXDQSTL-E DATASHEET OF IC 741 zo 107 RQA0014XXDQS
Contextual Info: RQA0014XXDQS Silicon N-Channel MOS FET REJ03G1704-0100 Rev.1.00 Oct 20, 2008 Features • High output power, High gain, High efficiency Pout = +28.5 dBm, Linear Gain = 20 dB, PAE = 60% f = 450 MHz • Suitable for UHF driver stage of high power transmission amplifiers

RQA0004LXAQS

Contextual Info: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz  Compact package capable of surface mounting

Contextual Info: MwT-S7 u s M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET a techno lo gy àk • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL7GOLD GATE • 250 MICRON GATE WIDTH

RQA0009SXAQS

Abstract: RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13
Contextual Info: RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting

Contextual Info: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 Previous: REJ03G1567-0100 Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)  Compact package capable of surface mounting

A773

Abstract: 5101 fg A773 5 pin
Contextual Info: MwT-A7 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH

Contextual Info: MwT-A7 26 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y n • • • • • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPLICATIONS 0.3 MICRON REFRACTORY METAUGOLD GATE 250 MICRON GATE WIDTH

tip 1471 transistor

Abstract: ic 307 g
Contextual Info: HARRIS m SEMICONDUCTOR T7 D E^ B O a St.'ì 0GDGD13 1 fi r - 3 / - * 5 HMF-0610 2—20 GHz 12.5 dB GAIN 150 mW HIGH GAIN POWER GaAs FET PRODUCT DATA JANUARY 1987 HARRIS MICROWAVE SEMICONDUCTOR FEATURES DEVICE OUTLINE □ □ □ □ □ □ □ 6 dB High Gain Typical @ 18 GHz

ay 5 1011

Abstract: 565-1 capacitor D16D LH0084 LH0084C LH0084CD LH0084D 56513
Contextual Info: LH0084/LH0084C National Semiconductor LH0084/LH0084C Digitally-Programmable-Gain Instrumentation Amplifier General Description The LH0084/LH0084C is a self-contained, high speed, high accuracy, digitally-programmable-gain instrumentation am­ plifier. It consists of paired FET-input variable-gain voltagefollower input stages followed by a differential-to-singleended output stage. The input stage is programmable in

DAC-08

Contextual Info: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

Contextual Info: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0300 Rev.3.00 Oct 20, 2006 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)

Contextual Info: RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0200 Rev.2.00 Aug 03, 2006 Features • High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% f = 520 MHz • Small Outline Package (WSON0303-2: 3.0 x 3.0 × 0.8mm) Outline

RQA0002

Abstract: marking us capacitor pf l1 RQA0002DNS RQA0002DNSTB-E marking Y1 rqa0002 WSON0504-2
Contextual Info: RQA0002DNS Silicon N-Channel MOS FET REJ03G0583-0100 Rev .1.00 Sep 26, 2005 Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz • Small outline package (WSON0504-2: 5.0 x 4.0 × 0.8 mm)

811 0305 01

Abstract: RQA0001DNS A0001 RQA0001TL-E REJ03G0582-0100 RQA0001
Contextual Info: RQA0001DNS Silicon N-Channel MOS FET REJ03G0582-0100 Rev.1.00 Sep 26, 2005 Features • High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz • Small Outline Package (WSON0303-2: 3.0 x 3.0 × 0.8mm) Outline