HIGH FREQUENCY TRANSISTOR Search Results

Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

2SC945

Abstract: 2SC945L 2SC945G transistor 2sc945 2SC945 transistor 2SC945 DATASHEET 2Sc945 equivalent 2sC945 npn transistor 2SC945 Q equivalent 2SC945 R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter voltage:

mmbt945

Abstract: MMBT733 audio output TRANSISTOR NPN BVCBO-50V Amplifier Transistor NPN 40V 100mA
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter voltage:

FPD7612P70

Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

2SC945

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor.  FEATURES * Collector-Emitter voltage:

mmbt945

Abstract: MMBT733 audio output TRANSISTOR NPN 094B BVCBO-50V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ DESCRIPTION The UTC MMBT945 is an audio frequency amplifier high frequency OSC NPN transistor. „ FEATURES * Collector-Emitter Voltage:

FPD6836P70

Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

FPD6836P70

Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

Contextual Info: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.

1J27

Abstract: 2SK70 2SK709
Contextual Info: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.

2SK709

Contextual Info: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.

2SK710

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK710 U nit HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • High |Yfs| : |Yfs| = 25mS Typ. Low Ciss : Ciss = 7.5pF (Typ.)

SMD M1A

Abstract: marking g3p marking L2 SOT23 6 m1a smd smd marking code m1a L2 SOT23 BF660 smd transistors smd code marking sot23 smd transistors code
Contextual Info: High Frequency SMD Transistors High Frequency SMD® Transistors Description Mechanical Data Philips Components high-frequency transistors fill the gap between general purpose transistors and wideband transistors by offering transition frequencies from a few hun­

Contextual Info: TOSHIBA 2SK711 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL JUNCTION TYPE <; K 7m mm • 1 m 1m HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. High |YfJ : IYfg| = 25mS Typ.

2SK709

Contextual Info: 2SK709 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK709 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

2SK711

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

TRANSISTOR BL 100

Abstract: 2SK710
Contextual Info: 2SK710 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK710 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

2SK710

Contextual Info: 2SK710 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK710 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)

2SK709

Abstract: high frequency amplifier BL1020 2SK70
Contextual Info: 2SK709 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK709 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)

2SK1875

Abstract: BL1020
Contextual Info: 2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: 2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

BL1020

Abstract: 2SK711
Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

2SK711

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)