HIGH FREQUENCY TRANSISTOR Search Results

Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

FPD6836P70

Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

Contextual Info: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.

2SK710

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK710 U nit HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • High |Yfs| : |Yfs| = 25mS Typ. Low Ciss : Ciss = 7.5pF (Typ.)

2sc945

Abstract: 2SC945L 2SC945 R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION 1 The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. TO-92 FEATURES * Collector-Emitter voltage:

2SK709

Contextual Info: 2SK709 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK709 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

2SK711

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

FPD7612P70

Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

Contextual Info: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. • Low Ciss: Ciss = 7.5 pF (typ.)

Contextual Info: UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC KSC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1 FEATURES *Collector-Base voltage: BVCBO=60V *Collector current up to 150mA

2SK710

Contextual Info: TOSHIBA 2SK710 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK710 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • 4.2 M A X High |Yfc| : |Yfs| = 25mS Typ.

High frequency transistors

Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes

2SK711

Contextual Info: TOSHIBA 2SK711 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK711 HIGH FREQUENCY AMPLIFIER APPLICATIONS. A M HIGH FREQUENCY AMPLIFIER APPLICATIONS. A U D IO FREQUENCY AMPLIFIER APPLICATIONS. . High |Yfs| : |Yfs| = 25mS Typ. Low C1SS Ciss = 7.5pF(Typ.)

Contextual Info: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C

Contextual Info: TOSHIBA HN3G01J TO SH IBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS +0.2 0.1 1 .6 _ ] AUDIO FREQUENCY AM PLIFIER APPLICATIONS

2SC2716

Abstract: 2SC2716-O 2SC2716-R 2SC2716-Y
Contextual Info: 2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2716 High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications • Unit: mm Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = 25°C)

Contextual Info: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

2SA1815

Abstract: 2SC4432 ITR04747 ITR04748
Contextual Info: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.

TRANSISTOR KT 837

Abstract: a1046 transistor A1046 A1684
Contextual Info: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

antilog amplifier

Abstract: Solid State Micro Technology 9076B 2031 Monolithic Transistor Pair Frequency Generator 10MHz OSCILLATOR sweep generator voltage to frequency converter
Contextual Info: tfe/w lcd, Puutfijobt* SSM 2031 - HIGH FREQUENCY OSCILLMERWOLTAGE TO FREQUENCY CONVERTER The SSM 2031 is a high frequency osci/lator/voltage to frequency converter with wide sweep range, high line­ arity and temperature stability. The device has a minimum

A1081

Contextual Info: 2SC5414A Ordering number : ENA1081 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5414A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9.5dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

2SC5662

Abstract: 2SC3838K 2SC4083 2SC4726 SC-75A T106 T146
Contextual Info: 2SC5662 / 2SC4726 / 2SC4083 /2SC3838K Transistors High-Frequency Amplifier Transistor 11V, 50mA, 3.2GHz 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K zExternal dimensions (Unit : mm) zFeatures 1) High transition frequency. (Typ. fT= 3.2GHz) 2) Small rbb’⋅Cc and high gain. (Typ. 4ps)

EN4644

Abstract: 2SA1857 2SC4400 MarKING JS 46441 AX SANYO
Contextual Info: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.

490-48

Abstract: 126-58-9 2SC5415A DSA0026081 I-T133
Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.