HIGH FREQUENCY DEVICE DATA BOOK Search Results

motorola handbook

Abstract: DL140 MC100E416 MC10E416
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quint Differential Line Receiver MC10E416 MC100E416 The MC10E416/100E416 is a 5-bit differential line receiving device. The 2.0GHz of bandwidth provided by the high frequency outputs makes the device ideal for buffering of very high speed oscillators.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quint Differential Line Receiver MC10E416 MC100E416 The MC10E416/100E416 is a 5-bit differential line receiving device. The 2.0GHz of bandwidth provided by the high frequency outputs makes the device ideal for buffering of very high speed oscillators.

NESG2107M33

Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification

marking NEC rf transistor

Abstract: nec npn rf
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted

DS90LV027

Abstract: DS90LV027M M08A
Contextual Info: General Description Features The DS90LV027 is a dual LVDS driver device optimized for high data rate and low power applications. The DS90LV027 is a current mode driver allowing power dissipation to remain low even at high frequency. In addition, the short circuit fault

DS90LV017

Abstract: DS90LV017M M08A
Contextual Info: General Description Features The DS90LV017 is a single LVDS driver device optimized for high data rate and low power applications. The DS90LV017 is a current mode driver allowing power dissipation to remain low even at high frequency. In addition, the short circuit fault

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409TB HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409TB is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.5 to 3.8 GHz, having the low insertion loss and high isolation.

PG2409T6X

Abstract: PG2409T6X-E2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2409T6X HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μPG2409T6X is a GaAs MMIC high power SPDT Single Pole Double Throw switch which were designed for WiMAX. This device can operate frequency from 0.05 to 6.0 GHz, having the low insertion loss and high isolation.

UPG2176T5N

Abstract: HS350 PG2176T5N
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The UPG2176T5N is a non-reflective 50Ω termination GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from frequency 2.3 to 5.85 GHz, with low insertion loss and high isolation.

12-PIN

Abstract: HS350
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2157T5F NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The UPG2157T5F is a non-reflective 50 termination GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from frequency 2.3 to 5.85 GHz, with low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2183T6C 4 W HIGH POWER SP4T SWITCH DESCRIPTION The μPG2183T6C is a GaAs MMIC SP4T Single Pole Four Throw switch which was designed for digital cellular phone application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

PC4558C

Abstract: C10535E G1298 UPC4558C uPC4559 equivalent PC4559C UPC4558C equivalent
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4559 HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4559 is a dual type operational amplifier having better slew rate and bandwidth than the µPC4558C with satisfying unity gain frequency compensation. Having low noise characteristics, this device is very convenient to

PG2157

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2157T5F 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2157T5F is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2176T5N 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2176T5N is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion

PG2157

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2157T5F 50 Ω TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The μPG2157T5F is a GaAs MMIC 50 Ω termination type high power SPDT Single Pole Double Throw switch which was developed for WiMAX. This device can operate frequency from 2.3 to 5.85 GHz, having the low insertion

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION The μPG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. TM <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.

Sony Electronics

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION The μPG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. TM This device can operate frequency from 500 MHz to 2.5 GHz, having the low insertion loss and high linearity.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION The μPG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. TM <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. This device can operate frequency from 0.01 to 2.5 GHz, having the low insertion loss and high isolation.

UPD5731

Abstract: HS350 12-PIN PD5731T6M uPD5731T6M
Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. This device can operate frequency from 0.01 to 2.5 GHz, having the low insertion loss and high isolation.

Contextual Info: DATA SHEET CMOS INTEGRATED CIRCUIT PD5731T6M WIDE BAND SP4T SWITCH DESCRIPTION The μPD5731T6M is a CMOS MMIC SP4T switch which was developed for mobile communications, wireless communications and another RF switching applications. <R> This device can operate frequency from 0.01 to 2.0 GHz, having the low insertion loss and high isolation.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC10E416 MC100E416 Differential D and Q; VBB available 600 ps Max. Propagation Delay High Frequency Outputs 2 Stages of Gain Extended 100E VEE Range of -4.2V to -5.46V Internal 75k£i Input Pulldown Resistors The MC 10E416/100E416 is a 5-bit differential line receiving device. The 2.0 GHz

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2404T6Q L-BAND SP3T SWITCH DESCRIPTION The μPG2404T6Q is an L-band SP3T GaAs FET switch which was developed for CDMA/PCS/GPS triple mode digital cellular telephone application. This device can operate frequency from 10 MHz to 2.0 GHz, having the low insertion loss and high isolation.