HIGH CURRENT POWER SWITCH Search Results

Contextual Info: Datasheet 1 Channel Compact High Side Switch ICs 2.0A Current Limit High Side Switch ICs BD82022FVJ Description Key Specifications „ „ „ „ „ BD82022FVJ is a Single Channel High Side Switch IC employing N-channel power MOSFET with low on resistance and low supply current for the power supply

Contextual Info: Datasheet 1 Channel Compact High Side Switch ICs 2.0A Current Limit High Side Switch ICs BD82023FVJ Description Key Specifications „ „ „ „ „ BD82023FVJ is a Single Channel High Side Switch IC employing N-channel power MOSFET with low on resistance and low supply current for the power supply

Contextual Info: Datasheet 1 Channel Compact High Side Switch ICs 2.5A Current Limit High Side Switch ICs BD82024FVJ Description Key Specifications „ „ „ „ „ BD82024FVJ is a Single Channel High Side Switch IC employing N-channel power MOSFET with low on resistance and low supply current for the power supply

BUX41

Contextual Info: SavantIC Semiconductor Product Specification BUX41 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Fast switching times APPLICATIONS ·For high speed ,high current and high power applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

RJK03M0DPA

Contextual Info: Preliminary Datasheet RJK03M0DPA 30V, 65A, 1.9mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0764EJ0200 Rev.2.00 Feb 08, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Advance Datasheet 1.5A High-side Power Distribution Switch with Enable and Flag General Description Features The AP2815 is an integrated high-side power switch that consists of N-Channel MOSFET, charge pump, over current & temperature and other related protection

MG75M2CK1

Abstract: tkp7
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

di 4-0992

Abstract: 5962F9676701VPC 5962F9676701VPA HFA11XXEVAL HS-1135RH HS7-1135RH-Q HS7B-1135RH-Q
Contextual Info: HS-1135RH Data Sheet Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting The HS-1135RH is a radiation hardened, high speed, low power current feedback amplifier built with Intersil’s proprietary complementary bipolar UHF-1 DI bonded wafer

Contextual Info: Preliminary Datasheet RJK03B7DPA 30V, 30A, 7.8m max. N Channel Power MOS FET High Speed Power Switching R07DS0930EJ0400 Rev.4.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

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Contextual Info: Analog Products Fact Sheet Power Management MC34670 IEEE 802.3af PD With Current Mode Switching Regulator DESCRIPTION The 34670 combines a Power Interface Port for IEEE 802.2af Powered Devices PD and a high performance current mode switching regulator. It allows a designer to build PDs

Contextual Info: Preliminary Datasheet RJK1211DNS 120V, 5A, 130m max. Silicon N Channel Power MOS FET Power Switching R07DS0090EJ0400 Rev.4.00 Apr 11, 2013 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Datasheet RJK0225DNS R07DS0259EJ0100 Rev.1.00 Jan 17, 2011 Silicon N Channel Power MOS FET Power Switching Features •     Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance

Contextual Info: Preliminary Datasheet RJK1028DSP 100V, 3A, 165m max. Silicon N Channel Power MOS FET Power Switching R07DS0197EJ0300 Rev.3.00 Apr 11, 2013 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpg=80 Min. (Ic=150A)

MG150M2CK1

Abstract: CW801
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . Power Translators and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=150A)

2SC1610

Contextual Info: Inchange Semiconductor Product Specification 2SC1610 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING see fig.2 PIN DESCRIPTION

RJK03A4DPA

Contextual Info: Preliminary Datasheet RJK03A4DPA 30V, 42A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0094EJ0400 Rev.4.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current

MG200H2CK1

Abstract: tf3s cm7200
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hj’E=200 Min. (Ic=200A)

Contextual Info: 2SB1020 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. I Q 3 MAX. 7.0 FEA TU R ES: . High DC Current Gain: hpE=2000(Min.) (at V c e =-3V, Ic =-3A

t0880

Abstract: T0-880AB 2SD1069
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1069 Unit in mm TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. 1 a 3 MAX., 03.6 :r0.2 . ’ HIGH VOLTAGE SWITCHING APPLICATIONS. "X- FEATURES : . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability.

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Contextual Info: Analog Products Fact Sheet Power Actuation MC33982 Single Intelligent High-Current Self-Protected Silicon High-Side Switch 2.0 mΩ DESCRIPTION High-Side Switches 33982 SIMPLIFIED APPLICATION DIAGRAM The 33982 is a self-protected silicon 2.0 mΩ high-side switch used to replace

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

Contextual Info: KSD1417 NPN SILICON DARLINGTON TRANSISTOR HIGH POWER SWITCHING APPLICATIONS • High DC Current Gain • Low Collector Emitter Saturation Voltage • Complement to KSB1022 TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage

Contextual Info: CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to ‹ Higher Current Rating withstand high energy in the avalanche mode and switch ‹ Lower Rds on efficiently. This new high energy device also offers a ‹ Lower Capacitances