HIGH CURRENT POWER SWITCH Search Results

BUV22G

Abstract: BUV22
Contextual Info: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:

BUV21

Abstract: BUV21G
Contextual Info: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:

Contextual Info: 2SD1049 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High current,High speed switching High reliability Applications Switching regulators Motor controls High frequency inverters General purpose power amplifiers

variable power supply circuit

Abstract: VARIABLE POWER SUPPLY. 0 - 30V a1694
Contextual Info: Data Sheet High Current Switching DC Power Supplies Models 1693 & 1694 High Current at a Low Price B&K Precision models 1693 and 1694 switching mode DC power supplies provide high current output in a lightweight and compact form factor. These 900W power supplies provide a variable

Contextual Info: HER301 - HER305 VISHAY 3.0A HIGH EFFICIENCY RECTIFIER u t e m ît I/POWER SEHCONNJCTOR/ Features Low Power Loss, High Efficiency Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching High Surge Current Rating High Reliability

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

BU108

Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A

AQI-657

Abstract: C02551 MPF960 IN40P MPF930 MPF990 10m50c
Contextual Info: 1 Advance Information I 2.0 AMPERE N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed speed power switching applications plies, CMOS logic, microprocessor for high-current, such as switching high- power or TTL to high current

BU108

Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A

TIP34C equivalent

Abstract: BU108 TRANSISTOR BC 384 5D2 6 BUV11 equivalent BDX54 2N3025 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain; hFE min. = 20 at IC = 6 A

BUV21

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

2N4922

Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A

BUV22 equivalent

Abstract: BUV22
Contextual Info: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A

buv22

Contextual Info: ON Semiconductort BUV22 SWITCHMODEt Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: • • HFE min. = 20 at IC = 10 A

Contextual Info: HER301 - HER305 3.0A HIGH EFFICIENCY RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Low Power Loss, High Efficiency Low Leakage Low Forward Voltage Drop High Current Capability High Speed Switching High Surge Current Rating High Reliability

2N5672

Abstract: 2N5671 81TI
Contextual Info: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power TVansistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hpE min = 20 at lc “ 25 A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Ttanslstor 40 AMPERES NPN 8ILICON POWER METAL TRANSISTOR 200 VOLTS 260 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hpE nnin. = 20 at lc » 12 A

BUV60

Abstract: BUV20
Contextual Info: ON Semiconductort BUV20 BUV60 SWITCHMODEt Series NPN Silicon Power Transistor . . . designed for high speed, high current, high power applications. 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS • High DC current gain: • • hFE min = 20 at IC = 25 A

smps 12v 1a mosfet

Abstract: 12V 15A SMPS low cost QGS controlLER DC 12v 4422 mosfet MOSFET 4420 SMPS Controllers "SMPS Controllers" TC4431 application TC4469 equivalent 4420 mosfet
Contextual Info: CONSIDERATIONS FOR DRIVING POWER MOSFETS IN HIGH-CURRENT, SWITCH MODE REGULATORS APPLICATION NOTE 22 CONSIDERATIONS FOR DRIVING POWER MOSFETS IN HIGH-CURRENT, AN-22 SWITCH MODE REGULATORS By Abid Hussain DRIVING THE MOSFET QG The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching

BUV60

Abstract: BUV20
Contextual Info: BUV20 SWITCHMODEt Series NPN Silicon Power Transistor SWITCHMODE series NPN silicon power transistors are designed for high speed, high current, high power applications. • High DC current gain: • • hFE min = 20 at IC = 25 A = 10 at IC = 50 A Low VCE sat :

201949B

Abstract: IC 3843 SMD RC0603JR-07100KL AAT4631 GRM188R71A474K
Contextual Info: DATA SHEET AAT4631/4631-1 High Power Adjustable Current Limited Load Switch with Fault Flag General Description Features The AAT4631/AAT4631-1 SmartSwitch are high power current limited P-channel MOSFET power switches designed for high side load switching applications. The

BUR21

Contextual Info: SGS-THOMSON BUR21 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA DESCRIPTION The BUR21 is a silicon multiepitaxiai planar NPN transistor in modified Jedec TO-3 metal case, inten­