HIGH CONDUCTANCE LOW LEAKAGE DIODE Search Results

Contextual Info: 1N3595 High Conductance Low Leakage Diode. Working Inverse Voltage 125 V. 2.53 D. Page 1 of 1 Enter Your Part # Home Part Number: 1N3595 Online Store 1N3595 Diodes High Conductance Low Leakage Diode. Working Inverse Transistors Voltage 125 V. Integrated Circuits

DO-35 PACKAGE

Abstract: Fairchild 1N3595 1n6099
Contextual Info: 1N3595/6099 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: A General Purpose, Low Leakage Diode in the DO-35 package. These diodes couple very low reverse leakage current with high forward conduction and high reverse blocking voltage. High Conductance

FAIRCHILD DIODE

Contextual Info: FDLL485B High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

FAIRCHILD DIODE

Contextual Info: FDLL3595 High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

Contextual Info: centrai CLL3595 LOW LEAKAGE SILICON DIODE Semiconductor corn. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

Contextual Info: Central" Sem iconductor Corp. CLL3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

Contextual Info: Central sem iconductor Corp. CLL3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

Contextual Info: Central" Semiconductor Corp. C L L3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1505A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A15 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1501A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A11 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit

CMHD3595

Contextual Info: Central CMHD3595 TM Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage.

silicon diode

Abstract: CLL3595 SOD-80 Marking Code
Contextual Info: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

Contextual Info: Central' CLL3595 LOW LEAKAGE SILICON DIODE % > Semiconductor Corp. DESCRIPTION: The CENTRAL SEM ICO NDUCTO R CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

silicon diode

Abstract: CLL3595
Contextual Info: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

CLL3595

Contextual Info: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD1504A LOW LEAKAGE DIODE FEATURES  Low Leakage  High Conductance MARKING: A14 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit

MARKING CODE diode sod123 FS

Contextual Info: Central CMHD3595 TM Semiconductor Corp. LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a Silicon Diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance application s req uiring low leakage.

1N3595

Abstract: diode 1N3595
Contextual Info: 1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: TA=25°C

MMBD1503A

Abstract: MMBD1503 MMBD1501 MMBD1501A MMBD1504 MMBD1504A MMBD1505 MMBD1505A a14 sot-23 marking a14 sot marking
Contextual Info: MMBD1501 A THRU MMBD1505(A) Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features High Conductance l Low Leakage l Surface Mount Package Ideally Suited for Automatic Insertion Low Leakage Diode o l 150 C Junction Temperature

16T MARKING

Abstract: MARKING J1A CLL3595 silicon diode
Contextual Info: Central" Sem iconductor Corp. C LL3595 LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications.

Contextual Info: CLL3595 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT LOW LEAKAGE SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance

CLL3595

Contextual Info: CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance

NTE591

Abstract: NTE590
Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V

NTE590

Abstract: NTE591 NTE59
Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V