HH SOT223 Search Results

Contextual Info: SIEMENS NPN Silicon Switching Transistors PZT 2222 PZT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907 A (PNP) Type Marking Ordering Code (tape and reel) Pin Coni igura ion

2222 A

Abstract: npn 2222
Contextual Info: SIEMENS NPN Silicon Switching Transistors PZT 2222 PZT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2907 PNP PZT 2907 A (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration

Philips 2222 050 capacitor

Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

BFG135 power amplifier for 900Mhz

Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
Contextual Info: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

TRANSISTORS BJT list

Abstract: fairchild power bjt datasheet fairchild power bjt 8F SOT-23 PNP on bjt 522 O2 sot-89 pnp transistor A1 sot-323 ROM SOT fairchild LED TO-92 SOT 213
Contextual Info: Small Signal Transistors - New Releases Small Signal Transistors New Releases - Fall 2001 Summary Space saving packages: SOT-323, SOT-563F and SOT-623F Newly developed Fairchild solutions: Camera Strobe Transistors and High Current Transistors W2@6X?h ?W&@@@ Xh

D2219

Abstract: D2003UK
Contextual Info: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en

stopwatch using 8051 microcontroller

Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
Contextual Info: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:

39 77 in sot-89 package

Contextual Info: Tape Dimensions And Orientation: Dimensions in mm 8 mm 12 mm SOT-23 \ p— A i ¡hH 7^7 SOT-89 SMDIP 11 _z 7 U - A l U — âJ U — d U - A L t.-a ] M M 8 . 3 12 -i 16 mm 15.7 3 Î 6. 3 i_ 1. 5 _3-^—. 4 . 1~* 1 . 6 1 1a t .A a J rJ y ! i Hi I" _ 3 _ ._ 9

MSD623

Abstract: triacs P87LPC764FN P87LPC762FD P87LPC764BN sot 163 Package 80C51 P87LPC768FD P87LPC762BD P87LPC764BD
Contextual Info: 51LPC microcontrollers and three-quadrant triacs Simplifying the design of power control applications Semiconductors Description By combining our 51LPC microcontrollers and BTA2xx three-quadrant triacs, Philips Semiconductors has made controlling resistive and inductive

PS 223 supervision

Abstract: MSD623 P87LPC764BN ROM SOT triac analog control for inductive loads P87LPC767FN 404 sot 51LPC 80C51 P87LPC762BD
Contextual Info: 51LPC microcontrollers and three-quadrant triacs Simplifying the design of power control applications Semiconductors Description By combining our 51LPC microcontrollers and BTA2xx three-quadrant triacs, Philips Semiconductors has made controlling resistive and inductive

Contextual Info: DT2955 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim - A - ► >k D c ' t

DIODE smd marking A7p

Abstract: smd code A4p SOT23 marking A7p sot23 a4p A7p smd smd code A7p SMD L31 sot143 marking code JTp smd A7p P5D SMD
Contextual Info: SMD Switching Diodes 11 SMD® Switching Diodes Description Mechanical Data Philips Components diodes for switching applications combine the highest quality standards with state-of-the-art production equipment to fulfill the need for generic, low-cost devices. These switching diodes offer a broad range of cur­

Contextual Info: DT014 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 'L I T E M Î I POWE R S EMICON DUCTO R j Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223

DS11

Abstract: DT454P
Contextual Info: DT454P VISHAY P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

BUK483-60A

Abstract: YBs transistor
Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSaW 0D3D73T OSD « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

DSS41A05

Abstract: resistor 0.22 ohm Dual 5w 79L05AC optocoupler Sd9 omron optocoupler relay es2818 es56 TL082 optocoupler Sd5 varistor 332k
Contextual Info: ES56-I Series 56K / V.90 Modem Solutions Data Sheet ESS Technology, Inc. DESCRIPTION MODEM FEATURES The ES56 chipset series is a highly integrated solution which brings advanced modem functionality to notebook and desktop systems. The ES56-I from ESS Technology

KDS 2F

Abstract: smd fl014 KDS DATE CODE SMD rectifier 729
Contextual Info: International e Rectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET® Power MOSFET Surface M ount A dvanced Process Technology Ultra Low O n-R esistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated V DSS = 55V ^DS on - 0.045Q lD = 3.7A Description

DS11

Abstract: DT455N
Contextual Info: DT455N VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

SOT23 6pin MARKING 3F

Abstract: marking 3f 6pin MBR7535 MBR7545
Contextual Info: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

3148b

Contextual Info: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

667 transistor ecb

Abstract: SOT-23 EBC SCR TRANSISTOR scr 209
Contextual Info: Mechanical Drawings 201 Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 037(0.94] 043(1.09) 1.0(25.4) M I N I MUM .330(8.38] .350(8.89) T 13 0 ( 3 . 3 0 ) 145(3.68) 1.0(25.4) M I N I MUM Case B-M Case A 4 125(3. .560(14 22 ) •600(15 24)