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    HFU2N60 Datasheets Context Search

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    HFD2N60

    Contextual Info: BVDSS = 600 V RDS on typ = 4.0 Ω HFD2N60 / HFU2N60 ID = 1.8 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N60  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N60 1.Gate 2. Drain 3. Source


    Original     		hfd2n60hfu2n60o-252o-251 PDF

    RG 702 Diode

    Abstract: hfu2n60s HFD2N60S HFU2N60 702 D-PAK
    Contextual Info: BVDSS = 600 V RDS on typ = 4.2 Ω HFD2N60S / HFU2N60S ID = 1.9 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N60S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N60S 1.Gate 2. Drain 3. Source


    Original     		hfd2n60shfu2n60so-252o-251+3rg 702 diodehfu2n60702 d-pak PDF

    HFU2N60

    Abstract: 10V 2A MOSFET N-channel c25 mosfet 600V 2A MOSFET N-channel MOSFET C25 mosfet 300V 10A
    Contextual Info: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFU2N60 █ APPLICATIONSL TO-251 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~150℃ 1―G T j ——Operating Junction Temperature …………………………150℃


    Original     		hfu2n60o-251width300sduty600vvgs+510v 2a mosfet n-channelc25 mosfet600v 2a mosfet n-channelmosfet c25mosfet 300v 10a PDF