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    hfu1n80

    Contextual Info: BVDSS = 800 V RDS on typ = 13 Ω HFD1N80 / HFU1N80 ID = 1.0 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design HFD1N80  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology D  Unrivalled Gate Charge : 7.5 nC (Typ.)


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    HFD1N80 HFU1N80 HFD1N80 O-252 O-251 hfu1n80 PDF