HFD1N80 Search Results
HFD1N80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
hfu1n80Contextual Info: BVDSS = 800 V RDS on typ = 13 Ω HFD1N80 / HFU1N80 ID = 1.0 A 800V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3 Originative New Design HFD1N80 Superior Avalanche Rugged Technology Robust Gate Oxide Technology D Unrivalled Gate Charge : 7.5 nC (Typ.) |
Original |
hfd1n80hfu1n80o-252o-251 |