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    226mJ

    Abstract: hfu1n65s
    Contextual Info: BVDSS = 650 V RDS on typ = 10.5 Ω HFD1N65S / HFU1N65S ID = 0.9 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD1N65S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source


    Original     		HFD1N65S HFU1N65S HFD1N65S O-252 O-251 226mJ hfu1n65s PDF