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Catalog Datasheet	Type	Document Tags	PDF
HFS640 Abstract: BVDSS Contextual Info: BVDSS = 200 V RDS on typ = 0.145Ω HFS640 ID = 18* A 200V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source D  Very Low Intrinsic Capacitances	Original	HFS640 O-220F 47max 54typ HFS640 BVDSS	PDF

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HFS640

Abstract: BVDSS
Contextual Info: BVDSS = 200 V RDS on typ = 0.145Ω HFS640 ID = 18* A 200V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source D  Very Low Intrinsic Capacitances

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HFS640 O-220F 47max 54typ HFS640 BVDSS

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