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HFS10N65S Abstract: HFS10N Contextual Info: BVDSS = 650 V RDS on typ = 0.83 Ω HFS10N65S ID = 9.2 A 650V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances	Original	HFS10N65S O-220F 47max 54typ HFS10N65S HFS10N	PDF

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HFS10N65S

Abstract: HFS10N
Contextual Info: BVDSS = 650 V RDS on typ = 0.83 Ω HFS10N65S ID = 9.2 A 650V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

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HFS10N65S O-220F 47max 54typ HFS10N65S HFS10N

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