HFP2N Search Results

HFP2N60

Contextual Info: BVDSS = 600 V RDS on typ = 4.2 Ω HFP2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

Contextual Info: BVDSS = 650 V RDS on typ = 5.0 Ω HFP2N65S ID = 1.8 A 650V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

HFP2N

Contextual Info: BVDSS = 700 V RDS on typ = 5.0 Ω HFP2N70S ID = 1.6 A 700V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

Contextual Info: BVDSS = 650 V RDS on typ = 4.5 Ω HFP2N65 ID = 1.8 A 650V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

HFP2N60

Contextual Info: BVDSS = 600 V RDS on typ = 4.0 Ω HFP2N60 ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

mosfet 600V 20A

Abstract: mosfet 20a 300v hfp2n60 N-Channel mosfet 600v 20A "N-Channel MOSFET" c25 mosfet Mosfet 600V, 20A mosfet 10a 600v mosfet 300V 10A transconductance mosfet
Contextual Info: N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP2N60 █ APPLICATIONSL TO-220 High-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature……………………………－55~150℃ 1―G T j ——Operating Junction Temperature …………………………150℃