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    HFE TRANSISTOR Search Results

    HFE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    		Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy

    HFE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KTC3875S

    Contextual Info: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTA1504S. KTC3875S 100mA, KTC3875S PDF

    KTA2014F

    Contextual Info: SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F.


    Original     		KTC4075F KTA2014F. 270Hz KTA2014F PDF

    KTA2013F

    Abstract: tfsm package TFSM
    Contextual Info: SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.


    Original     		KTA2013F KTC4074F. -100mA, -10mA KTA2013F tfsm package TFSM PDF

    TFSM

    Contextual Info: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.


    Original     		KTC4074F KTA2013F. 100mA, TFSM PDF

    KTC4074F

    Contextual Info: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package.


    Original     		KTC4074F KTA2013F. KTC4074F PDF

    HN3C51F

    Abstract: MARKING L toshiba TRANSISTOR 015G hn3c51 015G
    Contextual Info: HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN3C51F HN3C51F MARKING L toshiba TRANSISTOR 015G hn3c51 015G PDF

    2SC4738FV

    Abstract: MARKING LY toshiba 2SA1832FV
    Contextual Info: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV


    Original     		2SC4738FV 2SA1832FV 2SC4738FV MARKING LY toshiba 2SA1832FV PDF

    HN4A51J

    Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A51J -120V HN4A51J PDF

    HN4A06J

    Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A06J -120V HN4A06J PDF

    Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J PDF

    Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		KTA1517S -120V. KTC3911S. -120V, -10mA, PDF

    HN4C06J

    Abstract: HN4C06
    Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J 150oducts HN4C06J HN4C06 PDF

    HN4A06J

    Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A06J -120V HN4A06J PDF

    HN4C06J

    Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J HN4C06J PDF

    HN3A51F

    Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN3A51F -120V HN3A51F PDF

    Contextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C51J PDF

    Contextual Info: HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C06J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity Unit: mm : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C06J PDF

    HN4C51J

    Contextual Info: HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)


    Original     		HN4C51J HN4C51J PDF

    2SC2713

    Abstract: 2SA1163
    Contextual Info: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		2SC2713 2SA1163 2SC2713 2SA1163 PDF

    Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A51J PDF

    Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A06J PDF

    2SA21

    Abstract: 2SA2154 2SC6026
    Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		2SA2154 2SC6026 2SA21 2SA2154 2SC6026 PDF

    HN4A51J

    Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)


    Original     		HN4A51J -120V HN4A51J PDF

    2SC2713

    Abstract: 2SA1163
    Contextual Info: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700


    Original     		2SC2713 2SA1163 2SC2713 2SA1163 PDF