HFE GROUP Search Results

2SA1312

Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)

lowest noise audio NPN

Abstract: 2SA1312 hFE is transistor
Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)

TRANSISTOR tip41c schematic diagram

Abstract: TRANSISTOR tip41c schematic 0104S TIP41C TIP41CN TIP42C TIP42CN
Contextual Info: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n Figure 1: Package COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY APPLICATION n GENERAL PURPOSE CIRCUITS n AUDIO AMPLIFIER

TRANSISTOR tip41c schematic diagram

Abstract: TRANSISTOR tip41c schematic tip41c tip42c TIP41C TIP41CN TIP42C TIP42CN 18MAR2005
Contextual Info: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY Figure 1: Package APPLICATION n GENERAL PURPOSE CIRCUITS n AUDIO AMPLIFIER

Contextual Info: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

Contextual Info: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

TIP41CY

Abstract: TIP42CY TIP42C TRANSISTOR tip41c schematic diagram TIP41C tip41c tip42c amplifier TRANSISTOR tip41c schematic TIP42C DIAGRAM tip41c amplifier tip42c amplifier
Contextual Info: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching

TIP41C

Abstract: tip42c tip41c tip42c amplifier tip41c tip42c TRANSISTOR tip41c schematic diagram TÄ°P41C
Contextual Info: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching

Contextual Info: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

TIP31C

Abstract: TIP31c PNP Transistor tip31c application TIP31C1 TIP31CO Part Marking TO-220 STMicroelectronics JESD97 TIP32C tip31c3 tip31c transistor
Contextual Info: TIP31C Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description The TIP31C is a base island technology NPN

Contextual Info: TIP31C Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description The TIP31C is a base island technology NPN

TIP41CY

Abstract: TIP41C tip41c tip42c TRANSISTOR tip41c schematic diagram TRANSISTOR tip41c schematic tip42c TIP42CY TRANSISTOR tip41c TIP42C DIAGRAM STMicroelectronics to-220 amplifier date code
Contextual Info: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching

Contextual Info: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

TIP41C

Abstract: TIP42C TIP41CY TIP42CY TRANSISTOR tip41c schematic diagram tip41c tip42c amplifier TRANSISTOR tip41c schematic TRANSISTOR tip41c TIP42C DIAGRAM JESD97
Contextual Info: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching

transistor mj11032 equivalent

Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc

419B-02

Abstract: SMD310
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

HN1B01FDW1T1

Abstract: 318F SMD310
Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

SMD310

Abstract: SC-88 package
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

CW-5790

Contextual Info: Aluminum Electrolytic Capacitor/HFE Discontinued Radial lead type Series: HFE • Features Type : A Endurance :105°C 1000 to 2000h ■Specification Operating temp. range Rated W.V. range -55 to + 105°C 6.3 to 100 V .DC Nominal cap. range Capacitance 3.3 to 15000 µ F

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: Aluminum Electrolytic Capacitor/HFE Discontinued Radial lead type Series: HFE • Features Type : A Endurance :105°C 1000 to 2000h ■Specification Operating temp. range Rated W.V. range -55 to + 105°C 6.3 to 100 V .DC Nominal cap. range Capacitance 3.3 to 15000 µ F

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor