HFE GROUP Search Results

2SA1312

Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)

lowest noise audio NPN

Abstract: 2SA1312 hFE is transistor
Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)

TRANSISTOR tip41c schematic diagram

Abstract: TRANSISTOR tip41c schematic tip41c tip42c TIP41C TIP41CN TIP42C TIP42CN 18MAR2005
Contextual Info: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY Figure 1: Package APPLICATION n GENERAL PURPOSE CIRCUITS n AUDIO AMPLIFIER

Contextual Info: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

Contextual Info: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

TIP41CY

Abstract: TIP42CY TIP42C TRANSISTOR tip41c schematic diagram TIP41C tip41c tip42c amplifier TRANSISTOR tip41c schematic TIP42C DIAGRAM tip41c amplifier tip42c amplifier
Contextual Info: TIP41C TIP42C Complementary power transistors Features . • Complementary PNP-NPN devices ■ New enhanced series ■ High switching speed ■ hFE grouping ■ hFE improved linearity 3 1 Applications ■ General purpose circuits ■ Audio amplifier ■ Power linear and switching

Contextual Info: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

TIP31C

Abstract: TIP31c PNP Transistor tip31c application TIP31C1 TIP31CO Part Marking TO-220 STMicroelectronics JESD97 TIP32C tip31c3 tip31c transistor
Contextual Info: TIP31C Power transistors General features • New enhanced series ■ High switching speed ■ hFE improved linearity ■ hFE Grouping 3 Applications ■ 1 Linear and switching industrial application 2 TO-220 Description The TIP31C is a base island technology NPN

Contextual Info: MMBTSA1505 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA

transistor BS 17 P

Abstract: TRANSISTOR tip41c schematic diagram TRANSISTOR tip41c schematic TIP41C TIP41CN TIP42C TIP42CN
Contextual Info: TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE GROUPING hFE IMPROVED LINEARITY Figure 1: Package s t c u d o ) r s ( P t c e t u e d l o o r s

419B-02

Abstract: SMD310
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A

Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

SMD310

Abstract: SC-88 package
Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

On Semiconductor MARKING DIAGRAM SOD-123

Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A

transistor cross reference

Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER

k72 transistor

Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Contextual Info: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.

TIP102

Abstract: TIP105
Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

TIP102

Abstract: TIP105
Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

x112 st

Abstract: stx117 STX112 x112 STX112 equivalent pnp to92 STX117-AP pnp high voltage to92 Rev-4 X117
Contextual Info: STX112 STX117 Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ TO-92 AP Linear and switching industrial equipment

Contextual Info: MJE802 NPN power Darlington transistor Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment e t e ol Description

st marking code

Contextual Info: 2STBN15D100 Low voltage NPN power Darlington transistor Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application ■ 3 1 Linear and switching industrial equipment

NES6294Z

Contextual Info: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors