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    mosfet VDS 650V ID 6A TO 252

    Abstract: RG 702 Diode 66 6602 HFD2N65S hfu2n65s
    Contextual Info: BVDSS = 650 V RDS on typ = 5.0 Ω HFD2N65S / HFU2N65S ID = 1.6 A 650V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD2N65S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU2N65S 1.Gate 2. Drain 3. Source


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    hfd2n65shfu2n65so-252o-251+3mosfet vds 650v id 6a to 252rg 702 diode66 6602 PDF