HF51 Search Results

HF51D120ACE

Abstract: IRGPS60B120KD gen3
Contextual Info: PD - 94354 HF51D120ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

HF51A060ACE

Abstract: IRG4PSC71KD
Contextual Info: Preliminary Data Sheet PD-20610 11/98 HF51A060ACE Hexfred Die in Wafer Form 600 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF51C120ACE

Abstract: HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF51A060ACE

Abstract: IRG4PSC71KD Vishay IRM
Contextual Info: Preliminary Data Sheet PD-20610 11/98 HF51A060ACE Hexfred Die in Wafer Form 600 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

93814

Abstract: HF51D120ACE IRGPS60B120KD
Contextual Info: PD - 94354 HF51D120ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance

HF51C120ACE

Abstract: HFA30PB120
Contextual Info: Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF5-12F

Abstract: ASI10590
Contextual Info: HF5-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12F is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° A E • PG = 20 dB min. at 5 W/30 MHz

HF5-12S

Abstract: ASI10591 HF512S
Contextual Info: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • PG = 15 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP

X7FA

Abstract: AN11128 IC CD 4011 BCN MN102L35G EW21 mn10200 FD04 P15AD P14AD
Contextual Info: MICROCOMPUTER MN102H00 MN102H51K/F51K/57K/F57K LSI 説明書 Pub.No.22357-036 PanaXSeriesは松下電器産業株式会社の商標です。 その他記載された会社名及びロゴ、製品名などは該当する各社の商標または登録商標です。

gi 9444 diode

Abstract: STC24 STR Z 2757 Panasonic color television schematic diagram icl 7103 22357-036E panasonic tsu SERVICE MANUAL Panasonic ccd 180 512 sft gi 9444
Contextual Info: MICROCOMPUTER MN102H00 MN102H51K/F51K/57K/F57K LSI User’s Manual Pub.No.22357-036E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotypes and product names written in this manual are trademarks or registered trademarks

"class AB Linear"

Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
Contextual Info: RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier operation, 2-30MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 12.5 Volt, Class AB Linear BIAS P out

lv 5682

Abstract: CF021 cf041 951AT c2029 pd36 951A2 dupont 951 green tape CF031 INCOMING RAW MATERIAL INSPECTION format
Contextual Info: Design Rules For Physical Layout of Low Temperature Co-Fired Ceramic Modules Revision 11/17/99 Copyright  1996, 1997, 1998, 1999 National Semiconductor Corporation Unpublished Work - All Rights Reserved. No part of this work may be reproduced or utilized in any form or by any means electronic or

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

ASI10590

Abstract: HF5-12F
Contextual Info: HF5-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° A E • PG = 20 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5.0 W PEP • Omnigold Metalization System C Ø.125 NOM.

HF512S

Abstract: ASI10591 HF5-12S HF51
Contextual Info: HF5-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF5-12S is Designed for .112x45° A B C FEATURES: • PG = 20 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5 W PEP • Omnigold Metalization System E E ØC B H I

TS-2272

Abstract: Style 2651 vw1 HF625 awm 2651 RIBBON CABLE
Contextual Info: Electronic Solutions Division Cables and Accessories Selection Guide 3M Twin Axial Cable SL8800 Series Your system should be built around performance, not around your cables. The 3M Internal Twin Axial Ribbon Cable SL8800 Series is a new ultra low-profile, high-speed, high signal density cable. The products in the SL8800

dupont 951

Abstract: proner comatel lv 5682 dupont 951 green tape PRONER C0328 c2029 dupont 943 cf04 PGA wire bonding
Contextual Info: Design Rules For Physical Layout of Low Temperature Co-Fired Ceramic Modules Revision 8.1 1/05/2000 Copyright  1996, 1997, 1998, 1999, 2000 National Semiconductor Corporation Unpublished Work - All Rights Reserved. No part of this work may be reproduced or utilized in any form or by any means electronic or

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

2SC2016

Abstract: SEIKO MS621 SR927W IL37N SR626SW MS621 FL11N FL28N SR421SW SL920 SR416SW
Contextual Info: Micro Batteries Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module GENERAL DESCRIPTION FEATURES Seiko Instruments Inc. has commercialized a highly reliable silver oxide battery in response to quartz watches.

Contextual Info: HF5-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12F is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° A E • PG = 20 dB min. at 5 W/30 MHz