HF10 Search Results

HF100-12

Abstract: ASI10599
Contextual Info: HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme

JQX-115F-Q

Abstract: JQX-118F JZC-32FA Jzc 40F jqc relay JQX-10FH JZC-49F JZC-49FA HM4101F JQC-3F
Contextual Info: Signal Relay New Part Number Old Part Number HFD23 JRC-23F HFD27 JRC-27F HFD41/HFD41A HM4100F/HM4101F Power Relay New Part Number Old Part Number HF3FF JQC-3FF HF3FF-M JQC-3FF-M/HFKB HF7FD JQC-7FD HF7FF JZC-7FF HF10FF JQX-10FF HF10FH JQX-10FH HF12FF JQC-12FF

HF10D120ACE

Contextual Info: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •

HF10-12S

Abstract: ASI10593
Contextual Info: HF10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° A C B FEATURES: E • PG = 15 dB min. at 10 W/30 MHz

472K

Abstract: 621K
Contextual Info: IN DU CT AN CE TO n H LE RA NC E Q MI NI MU M TE ST FR EQ UE SR NC F MI Y (M NI MU Hz DC ) M ( MH MA RES z) XI IST M A CU UM NC (O E R MA RE HM S X. NT (m RA ) A) TI NG Unshielded Surface Mount Inductors NU MB ER * HF1008R HF1008 DA SH Series SERIES HF1008 NON-MAGNETIC CORE

HF10D120ACE

Contextual Info: PD - 94330 HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • •

IRGC100B60K

Abstract: HF100D060ACE
Contextual Info: PD - 94619 HF100D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI

Contextual Info: IN DU CT AN CE TO n H LE RA NC E Q MI NI MU M TE ST FR EQ UE SR NC F MI Y (M NI MU Hz DC ) M ( MH MA RES z) XI IST M A CU UM NC (O E R MA RE HM S X. NT (m RA ) A) TI NG Unshielded Surface Mount Inductors NU MB ER * HF1008R HF1008 DA SH Series SERIES 1008HF NON-MAGNETIC CORE

AWM 21008

Abstract: HF100
Contextual Info: 3M Twisted Pair Flat Cable .050" 28 AWG Stranded, Mass Terminable, Halogen Free PO HF100 Series • Low Smoke Zero Halogen LSZH Insulation. Advantages of LSZH insulation are the low smoke (IEC 61034-2:2005), and low toxicity of combustion gases (NF X 70-100-2:2006), reducing the risk to

Contextual Info: International IO R Rectifier PD'2'501 H F 10A 060A C B TARGET HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) Test Conditions Forward Voltage 1.8V Max. bvr

Contextual Info: HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12F is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A E FEATURES: C Ø.125 NOM. FULL R J • PG = 20 dB min. at 10 W/30 MHz

Contextual Info: Preliminary Data Sheet PD-20597A rev. B 02/02/04 HF10A060ACE Hexfred Die in Wafer Form 600 V Size 10 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

IRGSL10B60KD

Contextual Info: PD - 94655 HF10D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

HF10A060ACB

Abstract: HFA08TB60
Contextual Info: PD-2.501 TARGET HF10A060ACB HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 1.8V Max.

HF10A060ACB

Abstract: HFA08TB60
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.501 TARGET HF10A060ACB HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current

Contextual Info: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •

Contextual Info: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG

Contextual Info: ` SPECIFICATIONS Friction Header Mechanical Contact Retention Force: 0.91Kgf min. HF10 Series Friction R/A Type 2.54mm [.100’’] Pitch Electrical Voltage Rating: 250V Current Rating: 3.0A per pin Dielectric Withstanding Voltage: 750V AC Insulation Resistance: 1000MΩ min.

Contextual Info: HF10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° A C B FEATURES: E • PG = 20 dB min. at 10 W/30 MHz

100WPEP

Abstract: ASI10608 HF100-28 E270
Contextual Info: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • High linear power output

ASI10592

Abstract: HF10-12F
Contextual Info: HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF10-12F is Designed for FEATURES: B .112 x 45° A E • PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W PEP • Omnigold Metalization System C Ø.125 NOM.

34TP

Contextual Info: 3M Twisted Pair Flat Cable .050" 28 AWG Stranded, Mass Terminable, Halogen Free PO HF100 Series • Low Smoke Zero Halogen LSZH Insulation. Advantages of LSZH insulation are the low smoke (IEC 61034-2:2005), and low toxicity of combustion gases (NF X 70-100-2:2006), reducing the risk to

HF10-12F

Abstract: ASI10592
Contextual Info: HF10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12F is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A E FEATURES: C Ø.125 NOM. FULL R J • PG = 15 dB min. at 10 W/30 MHz

hexfred gen3

Contextual Info: PD - 94655 HF10D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation