HF POWER AMPLIFIERS 2-30 MHZ Search Results

4c6 toroids

Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Contextual Info: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96

1gw 82

Abstract: PBTC-1GW BL301 K558 Y460 ZNBT-60-1W
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-f U ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

1gw 75

Abstract: JEBT-6G
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

BL301

Abstract: K558 Y460 ZNBT-60-1W
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT FREQ. RANGE MHz MODEL NO. fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

BL301

Abstract: K558 Y460 ZNBT-60-1W DSA0036977
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz fL-fU ISOLATION* (dB) (RF-DC, RF&DC-DC) INSERTION LOSS* (dB) L Typ. Max. M Typ. Max. U Typ. Max. L Typ. Min. M Typ. Min. PRICE $ Note B C O N N E C T I O N

RFDC

Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G Note B C O N N E C T I O N — — — — — — BL301 BL301 hr hr 39.95 59.95 1.05 1.2 1.1 1.3 1.1 1.2 1.2 2.2 GU1041 GU1041

Contextual Info: BIAS-TEES 50Ω Surface Mount o HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU CAPD DATA ISOLATION*, dB INSERTION LOSS*, dB FREQ. RANGE MHz Note B C O N N E C T I O N BL301 BL301 hr hr 39.95 59.95 BL301 BL301 hr hr 59.95 69.95 CASE STYLE RF-DC, RF&DC-DC

K18 diodes

Abstract: TB268
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.

Contextual Info: BIAS-TEES Surface Mount o 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW 10-4200 0.1-4200 NEW TCBT-2R5G NEW TCBT-6G 20-2500 50-6000 Note B C O N N E C T I O N 1.2 1.2 0.6 0.6 1.6 1.6 32 25 20 15 40 40 20 20 40 40 20 20 — — —

Contextual Info: BIAS-TEES HIGH CURRENT 50Ω Surface Mount o 100 kHz to 6000 MHz JEBT MODEL NO. fL-fU ISOLATION*, dB CAPD DATA CASE STYLE RF-DC, RF&DC-DC (see RF/IF Designer handbook) Page Note B C O N N E C T I O N INSERTION LOSS*, dB FREQ. RANGE MHz L M U L M U Typ. Max.

R142.016.000 W

Contextual Info: B ias-T ees 50Q Surface Mount12 High Curren t TOO kHz to 6000 MHz JEBT MODEL NO. FREQ. RANGE MHz ISOLATION* „ • (dB) (RF-bC, RF&DC-DC) INSERTION LOSS* (dB) M U Typ. M ax. Typ. M ax. Typ. Max. 0.6 0.7 1.2 1.4 0.6 1.3 0.6 0.7 1.2 1.4 0.6 1.3 JEBT-4R2G

GU1041

Abstract: 1gW 38
Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.

Contextual Info: BIAS-TEES Surface Mount ❏ 50Ω HIGH CURRENT 100 kHz to 6000 MHz JEBT MODEL NO. JEBT-4R2G JEBT-4R2GW NEW TCBT-2R5G NEW TCBT-6G INSERTION LOSS* dB ISOLATION* (dB) (RF port to DC port) (RF&DC port to DC port) VSWR* (:1) L M U Typ. Max. Typ. Max. Typ. Max.

RCA 40411 transistor

Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]

40375

Abstract: 40411 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0

philips ferroxcube 4c6

Abstract: philips toroid 4c6 ferroxcube 4C6 toroid core 4C6 toroid AN98032 Philips Application Note ECO6907 electrosil HF power amplifier blf177 4C6 ferrite power combiner toroid
Contextual Info: APPLICATION NOTE Combining units for a 1 kW wideband HF amplifier AN98032 Philips Semiconductors Combining units for a 1 kW wideband HF amplifier CONTENTS 1 SUMMARY 2 INTRODUCTION 3 CIRCUIT DESCRIPTION 3.1 3.2 The input power divider The output power combiner

complement of 2N3053

Abstract: 2N3283 npn 40411 2N3773 regulator 40411 2n377 40375 40852 coil 2N3053 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES fT to 250 MHz . . . Ir to 60 A . . . Pr to 140 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30* 3 0 x3 0

LC 7995

Contextual Info: Bias-Tees 50 Q Surface MountJ High Current 100 kHz to6000 MHz JEBT INSERTION LOSS*, dB FREQ. RANGE MHz MODEL NO. H CASE STYLE ISOLATION*, C» RF-DC, RF&DC-DC L M u L M u Typ. Max. Typ. Max. Typ. M ax. iy p . Min. Typ. Min. Typ . Min. Note B JEBT-4R2G JEBT-6G

Contextual Info: M ITSUBISHI SOUND PR O CESSO R ICs M51567P PREAMPLIFIER FOR OPTICAL PICKUP DESCRIPTION The M 51567P is an optical pickup preamplifier for CD players. It has a built-in l-V amplifiers that convert current signals gained by photodetectors into voltage signals and

Contextual Info: S IE M E N S BFQ 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F= 1.3 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1 =B II

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

s175-50

Contextual Info: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz CASE OUTLINE GENERAL DESCRIPTION 55HX, Style 2 The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is

w56 transistor

Abstract: SN74ALS235
Contextual Info: SN74ALS235 64 x 5 ASYNCHRONOUS FIRSTĆIN, FIRSTĆOUT MEMORY SDAS108A − OCTOBER 1986 − REVISED SEPTEMBER 1993 D D D D D DW OR N PACKAGE TOP VIEW Asynchronous Operation Organized as 64 Words by 5 Bits Data Rates From 0 to 25 MHz 3-State Outputs Package Options Include Plastic