HEWLETT-PACKARD SEMICONDUCTOR Search Results

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

1990 1142

Contextual Info: Motion Sensing Products Reliability Data HCTL-1100 40-pin PDIP HCTL-1100 #PLC (44-pin PLCC) Description The following cumulative test results have been obtained from testing performed at Hewlett-Packard in accordance with the Hewlett-Packard General Semiconductor Specification.

diode hp 2800 SMD

Abstract: diode hp 2800 smd schottky diode T4 HSMP-2810 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

ATF-13484

Abstract: ATF at 2.4 Ghz bipolar transistor 2.4 ghz s-parameter ATF pHEMT ATF-36163 ATF13136 amplifier TRANSISTOR 12 GHZ low noise design ATF 10136 bipolar transistor ghz s-parameter phemt biasing ATF-36077
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

handling of beam lead diodes

Abstract: 4435 fet 9571 transistor Hewlett-Packard microwave pin diode transistor s2p A004R 5091-9074E 5964 fet a006 A001
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

A008 amplifier TRANSISTOR

Abstract: FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

INA-02186

Abstract: MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08
Contextual Info: Hewlett-Packard Company Communication Semiconductor Solutions Division 39201 Cherry Street Newark, CA 94560-4967 Customer Change Notice CCN 9808A For Hewlett-Packard Customer Notification Date: August 24, 1998 Parts Affected: All packing options of the following standard part numbers and their respective specials

Hewlett-Packard LED

Abstract: HP MMIC optocouplers* hp
Contextual Info: Hewlett-Packard: A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has

Contextual Info: Hewlett-Packard: A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has

Hewlett-Packard LED

Abstract: led lifespan mtbf hp transceiver hp 9500
Contextual Info: Hewlett-Packard: A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has

HP MMIC INA

Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Contextual Info: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF

mtbf hp transceiver

Abstract: Hewlett-Packard LED led lifespan Hewlett-Packard led lamps 1996
Contextual Info: Hewlett-Packard A Leader in Components A Brief Sketch Founded in 1961, and headquartered in San Jose, California, the Hewlett-Packard Company’s Components Group is the world’s largest independent supplier of communications components. Today the group has

features of 8251 microprocessor

Abstract: visible led device classifications intel 8085 microprocessor operation of 8251 microprocessor LED Display Theory intel IC 8251 microprocessor 8251 applications mil-l-85762 HDSP-211X microprocessors interface 8085 to 8251
Contextual Info: H Applications All of the application information listed here is available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative see listing in section 6 . In the US/Canada, technical literature is available from the

DELL Front Panel I/O

Abstract: IPMB DELL IPMI DS1621 IPMI BMC HEWLETT-PACKARD* AB 14 NEC protocol datasheet DS1624 LM75
Contextual Info: - IPMI IPMB v1.0 Address Allocation Document Revision 1.0 September 16, 1998 Intel Hewlett-Packard NEC Dell IPMB Address Allocation Revision History Date Rev Modifications 9/16/97 1.0 Initial release for IPMI v1.0 Copyright 1998, Intel Corporation, Hewlett-Packard Corporation, NEC Corporation,

DELL Front Panel I/O

Abstract: IPMI Platform Event Trap Format Specification v1 dell front panel connector american megatrends dell front panel connector IPMI Platform Event Trap Format Specification v1.0 NEC sl 1000 protocol IPMI command format introduction heartbeat sensor award bios 1998 CIM PA 66
Contextual Info: - IPMI Platform Event Trap Format Specification v1.0 Document Revision 1.0 December 7, 1998 Intel Hewlett-Packard NEC Dell Platform Event Trap Format Specification Revision History Date Revision 12/7/98 1.0 Modifications Initial release. Copyright 1998, Intel Corporation, Hewlett-Packard Company, NEC Corporation,

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D V O * HEWLETT wHEM PACKARD • 4447564 OOD'mfl SO-8 Package Features • • • • • • • • «HPA IAM-81008 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/1F Amp RF-IF Conversion Gain From 0.05 - 5 GHz

5964-3898E

Abstract: Rf detector HSMS 8202 S280A sot-23 diode common anode t4 5966-0784E Diodo b4 HSMS-2862 HSMS-2813 diode hp 2800 SMD zero bias schottky diode detector
Contextual Info: w ag H EW L E T T mLHA PA CK A R D Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at:

transistor A006

Abstract: handling of beam lead diodes Hewlett-Packard transistor microwave A004R
Contextual Info: Tf,]¡\ H EW LETT* VXM PA CK A R D Applications The application notes represented by these abstracts are available from, yo u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Technical info rm a tio n is also available on the WWW at:

Contextual Info: HEWLETT-PACKARD/ blE D CHPNTS That HEWLETT wL'K M PACKARD • 4 4 4 7 56 4 0 0 1 0 1 4 b 7£b MSA-1105 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 05 Plastic Package Features • High Dynamic Range Cascadable 50 £2 or 75 £2 Gain Block

D 1414 transistor

Abstract: AT-00511
Contextual Info: HEWLETT-PACKARD/ CMPNTS LIE D • K i » l HEWLETT ml'FA PACKARD 4447SA4 SSD HHPA AT-00511 Surface Mount General Purpose Silicon Bipolar Transistor Features • • • • • • □ D Q CI 7 7 E SOT-143 Plastic Package 11 dB Typical PidB at 2.0 GHz 11.5 dB Typical G1dB at 2.0 GHz

high power FET transistor s-parameters

Abstract: transistor 9455 PRIMER transistor A006
Contextual Info: | 2 3 | HEW LETT 1"HA P A C K A R D Applications The applicatim i notes represented by these abstracts are available fro m y o u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Techn ical inform ation is aiso available on the WWW at:

Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE D HEW LETT PACKARD • Features • • • • • • • IHPA 4H475 m □DlOOh'1 375 MSA-0386 M ODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers 86 Plastic Package Cascadable 50 Q Gain Block

C 5339

Contextual Info: HEüJLETT-PACKARD i CMPNTS HEWLETT PACKARD 50E D D 44475Û4 OOOSbOl BEAM LEAD SCHOTTKY DIODES FOR MIXERS AND DETECTORS 1-26 GHZ 1 Di HSCH-5300 SERIES Features PLATINUM TRI-METAL SYSTEM High Temperature Stability S ILIC O N NITRIDE PASSIVATION Stable, Reliable Performance

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog